2SK3176 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PI-MOS V) SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSAPPLICATIONS rm.‘ /12;5f.2i(‘3.2‘ 2,0a 11.04.5Low Drain-Source ON Resistance : RDS (ON) = 38 m0 (Ty ..
2SK3179 ,N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)2SK31797§K217QI‘UHF--SHF BAND LOW NOISE AMPLIFIER
2SK3179 ,N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mm11.1.n14.| LU.|0 Low Noise Figure l 1.25:0.1‘0 High Gain m"__-oh"n n-l-Inlpu ..
2SK319 , SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)
2SK3192 ,Power Device
2SK3199 , External dimensions
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3176
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PI-MOS V) SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
TOSHIBA 2SK3176
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (n-MOSV)
2SlK31l76
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS " 15.9max " 1:372:22
0 Low Drain-Source ON Resistance : RDS (ON) = 38 mi) (Typ.)
20,0i0.3
0 High Forward Transfer Admittance .' lyfsl = 30 S (Typ.)
0 Low Leakage Current .. IDSS = 100 PA (Max.) (VDS = 200V)
0 Enhancement-Model : Vth = 1.5--3.5V (VDS = 10V, ID = 1mA)
2,0i0.3
20.5t0.5
1-°+3i§5
MAXIMUM RATINGS (Ta = 25°C)
5.45d:0.2 5.45102
CHARACTERISTIC SYMBOL RATING UNIT (f, "c',liari E
E a Q)
Drain-Source Voltage VDSS 200 V I'. OLE» n; m1 - _
Drain-Gate Voltage (RGS = 20 k0) VDGR 200 V l 2 3 g
Gate-Source Voltage VGSS 1'20 V l. GATE
D . C t DC (Note 1) ID 30 A 2. DRAIN (HEAT SINK)
ram 11rren Pulse (Note 1) IDP 120 A 3. SOURCE
Drain Power Dissipation (Te = 25°C) PD 150 W JEDEC -
Single Pulse Avalanche Enexgryt 2) EAS 925 mJ JEIT A SC-65
Avalanche Current I AR 30 A TOSHIBA 2-16CIB
Repetitive Avalanche Energy E 15 mJ Weight : 4.6 g (Typ.)
(Note 3) AR
Channel Temperature Teh 150 "C
Storage Temperature Range Tstg -55-150 "C
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth(ch-c) 0.833 "C/ W
Thermal Resistance, Channel to Ambient Rth(ch-a) 50.0 "C/ W
(Note 1) : Please use devices on condition that the channel temperature is below 150°C.
(Note 2) .' VDD = 50V, Tch = 25°C (initial), L = 1.66 mH, RG = 25 n, IAR = 30A
(Note 3) '. Repetitive rating ; Pulse Width Limited by maximum junction temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-1 1
TOSHIBA 2SK3176
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = i16 V, VIN? = 0V - - ul-IO PA
Drain Cut-off Current IDSS VDS = 200V, VGS = 0V - - 100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - 10 mA, VGS - ov 200 - - V
Gate Threshold Voltage Vth VDS = 10V, ID = 1 mA 1.5 - 3.5 V
Drain-Source ON Resistance RDS (ON) VGS = 10V, ID = 15A - 38 52 m0
Forward Transfer
A dmittance lyssl VDS - 10V, ID - 15A 15 30 - S
Input Capacitance Ciss - 5400 -
Reverse Transfer VDS = 10 V, VGS = 0 V
Capacitance Crss f = 1 MHz - 580 - pF
Output Capacitance Coss - 1900 -
Rise Time tr 10Vn1D= 15 A - 15 -
VGS ovn
Turn-on Time ton - 55 -
Switching Cl
. ts ns
Time .
Fall Time tf “" - 25 -
VDD'. -. 100 V
Turn-off Time toff DutySI%, tW_ - 10 (rs - 190 -
Total Gate Charge (Gate-
. Qg . - 125 -
Source Plus Gate-Drain) VDD =. 160 V, VGS = 10 V C
Gate-Source Charge Qgs ID = 30 A - 80 - n
Gate-Drain ("Miller") Charge di - 45 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse
Current (Note 1) IDR - - - 30 A
Pulse Drain Reverse Current
(Note 1) IDRP - - - 90 A
Forward Voltage (Diode) VDSF IDR = 30 A, VGS = 0 V - - -2.0 V
Reverse Recovery Time trr IDR = 30 A, VGS = 0 V - 270 - ns
Reverse Recovery Charge er dIDR/ dt = 100 A/ #5 - 3.0 - PC
MARKING
TOSHIBA yd. Lot Number
K3176--- TYPE
I I El- Month (Starting from Alphabet A)
L] U LI Year (Last Number of the Christian Era)
2 2002-09-1 1
TOSHIBA
2SK3176
DRAIN CURRENT ID (A)
DRAIN CURREN T
FORWARD TRANSFER ADMITTANCE
”H (S)
ID - VDS
COMMON
SOURCE
Te = 25''C
16 PULSE TEST
4 VGS = 3.4V
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON SOURCE
VDS = 10 V
PULSE TEST
Te = -55''C
o 2 4 6 8 10
GATE-SOURCE VOLTAGE VGs (V)
lstl - ID
COMMON SOURCE
50 VDS = 10 v
PULSE TEST
Tc = -55''C
0.3 0.5 1 3 5 10 30 50 100
DRAIN CURRENT ID (A)
In - VDS
4 6 MMON SOURCE
. I Tc = 25°C
PULSE TEST
c? 4.4
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON SOURCE
To = 25''C
PULSE TEST
DRAIN-SOURCE VOLTAGE VDS (V)
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
RDS (ON) - ID
COMMON SOURCE
0.3 Tc = 25°C
PULSE TEST
VGS = 10V
DRAINSOURCE ON RESISTANCE
RDS<0N> (0)
1 3 5 10 30 50 100
DRAIN CURRENT ID (A)
TOSHIBA 2SK3176
RDS (0N) - Te IDR - VDS
COMMON SOURCE A COMMON
M 385$; lgEgT S SOURCE
p; 0.08 E Tc 25 C
5 J? PULSE TEST
be' 0.06 g:
a: g; m
52’ o 0.04
D ttd il?
E 0 02 m
g . s, VGS = O V
-80 -40 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0
CASE TEMPERATURE Te CC) DRAIN-SOURCE VOLTAGE VDs (V)
CAPACITANCE - VDs Vth - Te
' COMMON SOURCE
10000 5 VDS = 10 V
> 4 ID = 1 mA
A PULSE TEST
8 1000 >
'i; a 2
E 300 g
COMMON SOURCE E
100 vas = 0 v g
f 1MHz -80 -40 0 40 80 120 160
0 Tc=25°C
A E TEMPE AT E T "
0.1 0.3 1 3 10 30 100 C s R UR c CC)
DRAIN-SOURCE VOLTAGE VDS (V)
DYNAMIC INPUT/OUTPUT
PD - Te CHARACTERISTICS
200 COMMON SOURCE
ID = 30 A
Tc = 25°C
PULSE TEST
DRAIN POWER DISSIPATION PD (W)
DRAIN-SOURCE VOLTAGE VDs (V)
GATE-SOURCE VOLTAGE sz (V)
0 40 80 120 160 200 0 40 80 120 160 200
CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC)
4 2002-09-1 1
TOSHIBA 2SK3176
DRAIN CURRENT ID (A)
rth - tw
g g 0.5
ty? 0.3 0 2
'iii ti
ti 0.1
9% 0.05
Q< PDM
Nth' 0.03
:'.'-jiii, t
£2 0.01 SINGLE PULSE 1:trlT-4
H 0.01
g Duty = t/T
a 0.005 Rth(eh-c) = 0.833°C/W
10,11 100p lm 10m 100m 1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA EAS _ Teh
300 1000
ID MAX. (PULSE) .)k. 'ii,:
100 w 800
1D MAX.(CONTINUOUS) t 600
DC OPERATION >
Te = 25°C <2:
25 50 75 100 125 150
1 CHANNEL TEMPERATURE (INITIAL) Teh (°C)
0.5 .g. SINGLE NONREPETITIVE
PULSE Te = 25°C
0.3 Curves must be derated linearly BVDSS
with increase in
temperature. VDSS MAX. 15 V IAR
0.1 I I /
1 3 5 10 30 50 100 300 500 / \
- 15 V I / l
DRAIN-SOURCE VOLTAGE VDs (V)
VDD /' \ VDs
TEST CIRCUIT WAVE FORM
RG = 25 n BVDss
E = =.L.12.
AS 2 ( )
VDD = 50 v, L = 1.66 mH BVDss - VDD
5 2002-09-1 1
TOSHIBA 2SK3176
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2002-09-1 1
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