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2SK3130
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3130 Switching Regulator Applications Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V , ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C) Tstg �55~150 °C
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C (initial), L � 16.8 mH, RG � 25 �, IAR � 6 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
Unit: mm
Weight: 1.9 g (typ.)
