2SK3125 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) DC-DC Converter, Relay Drive and Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 5.3 mΩ (typ.) DS (ON) High forward transf ..
2SK3125 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) DC-DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 0.833 ..
2SK3126 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 0.48 Ω (typ.) DS (ON)High forward ..
2SK3128 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 9.5 mΩ (typ.) DS (ON)High forward transfer ..
2SK3130 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsApplications Unit: mm Reverse-recovery time: t = 85 ns rr Built-in high-speed flywheel diod ..
2SK3131 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 0.5 ° ..
39-01-2060 , 4.20mm (.165") Pitch Mini-Fit Jr.™ Receptacle Housing, Dual Row, UL 94V-2, 6 Circuits
39-01-2105 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-0, 10 Circuits
39-01-2140 , 4.20mm (.165") Pitch Mini-Fit Jr. Receptacle Housing, Dual Row, UL 94V-2, 14 Circuits
39-29-1048 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Dual Row, Right Angle, with PCB Mounting Flange, 4 Circuits
39-30-3047 , 4.20mm (.165") Pitch Mini-Fit Jr. Header, Single Row, Right Angle, with Snap-in Plastic Peg PCB Lock
39522-1012 , 5.00mm (.197") Pitch Eurostyle™ Horizontal PCB Header, 12 Circuits
2SK3125
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) DC-DC Converter, Relay Drive and Motor Drive Applications
2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3125 DC-DC Converter, Relay Drive and
Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V , ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD � 25 V, Tch � 25°C, L � 140 �H, RG � 25 �, IAR � 70 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 3.65 g (typ.)
