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2SK30ATMTOSN/a3000avaiField Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications


2SK30ATM ,Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit ApplicationsApplications  High breakdown voltage: V = −50 V GDS High input impedance: I = −1 nA (max) (V ..
2SK3105 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 95 ..
2SK3107 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3107-T1 ,Nch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3108 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDra ..
2SK3109 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDr ..
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS


2SK30ATM
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK30ATM

Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications High breakdown voltage: VGDS = −50 V High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Low noise: NF = 0.5dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz)
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C) NF VDS � 15 V, VGS � 0
RG � 100 k�, f � 120 Hz
Note: IDSS classification R: 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50
Unit: mm
Weight: 0.21 g (typ.)
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