2SK3090 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 16 mΩ (typ.) DS (ON)High forward transfer ..
2SK30ATM ,Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit ApplicationsApplications High breakdown voltage: V = −50 V GDS High input impedance: I = −1 nA (max) (V ..
2SK3105 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 95 ..
2SK3107 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3107-T1 ,Nch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3108 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDra ..
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
2SK3090
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
2SK3090 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) High forward transfer admittance : |Yfs| = 26 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 83.3
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 µH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
