2SK3078A ,Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier ApplicationsApplications Unit: mm Output power: P ≥ 28.0dBmW o Gain: G ≥ 8.0dB p Drain Efficiency: ηD ..
2SK3079A ,Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier ApplicationsApplications Unit: mm Output power: P = 33.50dBmW (2.2 W) (min) o Gain: G = 13.50dB (min) ..
2SK3080 , Silicon N Channel MOS FET High Speed Power Switching
2SK3080 , Silicon N Channel MOS FET High Speed Power Switching
2SK3081 , Silicon N Channel MOS FET High Speed Power Switching
2SK3084 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS) Chopper Regulator DC .DC Converter, and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 40 mΩ (typ.) DS (ON)High ..
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
2SK3078A
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3078A VHF/UHF Band Amplifier Applications Output power: Po ≥ 28.0dBmW Gain: Gp ≥ 8.0dB Drain Efficiency: ηD ≥ 50%
Maximum Ratings (Ta = 25°C) Note 1: Tc = 25°C
Marking
Electrical Characteristics (Ta = 25°C) VDS = 4.5 V, Iidle = 50 mA �
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
Unit: mm