2SK3051 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 24 mΩ (typ.) DS (ON)High forward transfer ..
2SK3053 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3054 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK-3054 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES• Can be driven by a 2.5-V power source• Low gate cut-off voltageABSOLUTE MAXIMUM RATINGS ( ..
2SK3057 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SK3058 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
2SK3051
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 50 V) Enhancement−mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 71 µH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
