2SK302 ,Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm Low reverse transfer capacitance: C = 0.035 pF (typ.) rss Low noise fi ..
2SK3023 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3024 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3025 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3026 ,Silicon N-Channel Power F-MOS FETFeaturesl Avalanche energy capacity guaranteedl High-speed switchingunit: mml Low ON-resistancel No ..
2SK303 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
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2SK302
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK302 FM Tuner, VHF RF Amplifier Applications Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps = 28dB (typ.) Recommend operation voltage: 5~15 V
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: IDSS classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
Unit: mm
Weight: 0.012 g (typ.)
