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2SK3017TOSHIBAN/a3500avaiField Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive Applications
2SK3017= |2SK3017TOSHIBAN/a848avaiField Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive Applications


2SK3017 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.39 ..
2SK3017= ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 1.05 Ω (typ.) DS (ON)High forward transfer ..
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2SK3017-2SK3017=
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive Applications
2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK3017

DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 41.6
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 24.5 mH, RG = 25 Ω, IAR = 8.5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 5.8 g (typ.)
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