2SK2998 ,Field Effect TransistorThermal Characteristics JEDEC TO-92MOD Characteristics Symbol Max Unit JEITA — Thermal resistance, ..
2SK301 ,SI N CHANNEL JUCTIONAbsolute Maximum Ratings (Ta=25 "C) lItem Symbol Value Unit (gl" V 4 V . V-XEEE pros, 55 V lg(f-h . ..
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2SK3017 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.39 ..
2SK3017= ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 1.05 Ω (typ.) DS (ON)High forward transfer ..
2SK3018W , N-Channel POWER MOSFET
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
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3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
2SK2998
Field Effect Transistor
2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2998 Chopper Regulator, DC−DC Converter Applications Low drain−source ON resistance : RDS (ON) = 11.5 Ω (typ.) High forward transfer admittance : |Yfs| = 0.4 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 138
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
