2SK2996 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2996.. ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2998 ,Field Effect TransistorThermal Characteristics JEDEC TO-92MOD Characteristics Symbol Max Unit JEITA — Thermal resistance, ..
2SK301 ,SI N CHANNEL JUCTIONAbsolute Maximum Ratings (Ta=25 "C) lItem Symbol Value Unit (gl" V 4 V . V-XEEE pros, 55 V lg(f-h . ..
2SK3012 , VX-2 Series Power MOSFET(600V 12A)
2SK3017 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.39 ..
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
2SK2996-2SK2996..
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 600 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.41 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
