2SK2963 ,Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application2SK2963TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (LZ-zr-MOSV)q_m-ttilI9leDC-DC CON ..
2SK2963 ,Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter ApplicationAPPLICATIONS Unit in mm.-._.~. 1£IIIAVI.U|VIHI\4V Gate Drive 0.41005Low Drain-Source ON Resistance ..
2SK2964 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSVI) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 0.13 Ω (typ.) DS (ON)High ..
2SK2969 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK2976 ,DC-DC Converter ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · 4V drive.2083B[2SK2976]6.55.0 2.30.540.85 ..
2SK2977 ,DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
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2SK2963
Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application
TOSHIBA ZSK2963
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (LZ-n-MOSV)
ZSK2963
DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm
4,6MAx. 1.6MAX.
0 4V Gate Drive 1.7MAX. th4.t0.05 -
0 Low Drain-Source ON Resistance iRDS(ON) = 0.5 n (Typ.) C-i-l- - I
o' ae'
0 High Forward Transfer Admittance :Istl = 1.2S (Typ.) L! g
0 Low Leakage Current : IDSS = 100 PA (Max.) (VDS = 100V) +0 03” 1 I_ g
att5i-ij'.iB co.
0 Enhancement-Mode : Vth = 0.8--2.0V +0.08 m l 08
(VDS = 10 V, ID = 1 mA) 0-4*°3°5 Irl 04-0305
1510.1 1.5101
MAXIMUM RATINGS(Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT [33
Drain-Source Voltage VDSS 100 V 2
Drain-Gate Voltage (RGS = 20 kn) VDGR 100 V 1
1. GATE
Gate-Source Voltage VGSS 1‘20 V 2. DRAIN (HEAT SINK) 3
Drain Current DC (Note 1) ID 1 A 3. SOURCE
. . . .Pulse (Note 1) IDP 3 A JEDEC -
Drain Power Dissipation PD 0.5 W JEITA
Drain Power Dissipation (Note 2) PD 1.5 W -
Single Pulse Avalanche Energy E 137 m J TOSHIBA 2-5KIB
(Note 3) AS Weight : 0.05 g (Typ.)
Avalanche Current IAR 1 A
Repetitive Avalanche Energy E 0 05 m J MARKING
(Note 4) AR . (fl
Channel Temperature Tch 150 T
Storage Temperature Range Tstg -55--150 T Z B
THERMAL CHARACTERISTICS LI LI LI
CHARACTERISTIC SYMBOL MAX. UNIT (The two digits represent
Thermal Resistance, Channel to Ambient Rth(eh-a) 250 "C/ W the part number.)
(Note 1) : Please use devices on condition that the channel temperature is below 150°C.
(Note 2) : Mounted on ceramic substrate (25.4mm X 25.4mm X 0.8 mm)
(Note 3) : VDD = 25 V, Teh = 25°C (initial), L = 221 mH, RG = 25 Q, IAR = 1 A
(Note 4) : Repetitive rating ; Pulse Width Limited by maximum junction temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-08-22
TOSHIBA ZSK2963
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = , 16 V, VDS = 0 V - - i 10 PA
Drain Cut-off Current IDSS VDS = 100V, VGS = 0V - - 100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - 10 mA, VGS - 0V 100 - - V
Gate Threshold Voltage Vth VDS = 10 V, ID = 1 mA 0.8 - 2.0 V
. . VGS = 4V, ID = 0.5 A - 0.65 0.95
Drain-Source ON Resistance RDS(ON) VGS = 10 V, ID = 0.5 A - 0.5 0.7 n
Forward Transfer
Admittance lyfsl VDS - 10 V, ID - 0.5 A 0.6 1.2 - S
Input Capacitance Ciss - 140 -
Revers.e Transfer Crss VDS = 10 V, VGS = 0 V, - 20 - pF
Capacitance f = 1 MHz
Output Capacitance Cogs - 45 -
Rise Time tr V 10V n ID = 0.5A - 8 -
GS 0V VOUT
Turn-on Time t - 13 -
Switching on a RL = 50 fl
Time 0 ns
Fall Time tf MO - 45 -
VDD = 50 V
Turn-off Time toff Duty s 1%, tw = 10 ,as - 175 -
Total Gate Charge (Gate-
. Qg . - 6.3 -
Source Plus Gate-Drain) VDD =. 80 V, VGS = 10 V, C
Gate-Source Charge Qgs ID = 1 A - 4.3 - n
Gate-Drain ("Miller") Charge di - 2 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse I - - - 1 A
Current (Note 1) DR
Pulse Drain Reverse Current I 3 A
(Note 1) DRP - - -
Forward Voltage (Diode) VDSF IDR = 1 A, VGS = 0 V - - -1.5 V
Reverse Recovery Time trr IDR = 1 A, VGS = 0 V - 80 - ns
Reverse Recovery Charge er dIDR/ dt = 50 A/ #3 - 140 - pd?
2 2002-08-22
TOSHIBA
ZSK2963
DRAIN CURRENT ID
DRAIN CURREN T
FORWARD TRANSFER ADMI'I'I‘ANCE
”H (S)
ID - VDS
4 COMMON SOURCE
3 Ta = 25''C
PULSE TEST
VGS = 2 V
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON SOURCE
VDS = 10 v
PULSE TEST
0 1 2 3 4 5
GATE-SOURCE VOLTAGE VGS (V)
lstl - ID
Ta = 100°C
COMMON SOURCE
VDS = 10V
PULSE TEST
0.03 0.05 0.1 0.3 0.5 1.0
DRAIN CURRENT ID (A)
DRAIN—SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID
DRAIN-SOURCE 0N RESISTANCE
Rns
ID - VDS
COMMON SOURCE
Ta = 25''C
PULSE TEST
54 3.5
l 2 3 4 5
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON SOURCE
Ta = 25°C
PULSE TEST
4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
ME (ON) - ID
COMMON SOURCE
Ta = 25°C
PULSE TEST
0.03 0.05 0.1 0.3 0.5 1 3
DRAIN CURRENT ID (A)
TOSHIBA ZSK2963
RDS (0N) - Ta IDR - VDS
2.5 3.0
COMMON SOURCE 2 f212g?
8 PULSE TEST V Ta = 25°C
E 2.0 © PULSE TEST
e - 1.0
'G A g'
59 1.5 E 0.5 VGs=10V
a ID = 0.5 A td .
o 2 , Q
8 g 1.0 Q 0.3
ttt w 1.0 iii
o trt M
g' ID = 0.5, 1.0 A E
g 0.5 VGS = 10 v s,
a 0.05
0 0.04
-80 -40 0 40 80 120 160 o _0.2 -0.4 -0.6 -0.8 -1.0
AMBIENT TEMPERATURE Ta (°C) DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE - VDS Vth - Ta
3000 .1
3 COMMON SOURCE
MDS = 10 v
A 1000 , ID = 1 mA
'r,, 500 PULSE TEST
- 300 tl
8 100 g
,sCi, 28 E
g 10 COMMON to,
SOURCE E
VGS = 0 V w
3 f = 1 MHz ti
Ta = 25°C
0.1 1 10 100 1000
-80 -40 0 40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
DYNAMIC INPUT / OUTPUT
PD - Ta 160 CHARACTERISTICS 16
A 25.4mm M 25.4mm X0.8 mm A COMMON SOURCE
it it ID = 1 A '
V MOUNTED ON CERAMIC SUBSTRATE m Ta = 25°C ",etrn V
Cl PULSE TEST cn
I J? 120 17/ 12 J?
g a _ w:'','.',,',''
'-' U VDD - 20V//'< 8
<1 F 40 <
b, 4 "e' Cw'" S
o 80 f 8 0
Q > tst'''''" 80 >
e :3 l /// 8
E 8 \ west'"''''''" 5
O m 40 " 4 3
Ch 2- \ '
E g \ VGS t;
0 40 80 120 160 200 0 2 4 6 8
AMBIENT TEMPERATURE Ta (°C) TOTAL GATE CHARGE Qg (nC)
4 2002-08-22
TOSHIBA
ZSK2963
DRAIN CURRENT ID (A)
0.03 X SINGLE
0.01 Curves must be derated
linearly with increase in VDDS MAX.
SINGLE PULSE
TRANSIENT THERMAL IMPEDANCE
Tth (°C/W)
v—I Ca)
1m 10m 100m
SAFE OPERATING AREA
ID MAX. (PULSE) X
ID MAX. (CONTINUOUS)
DC OPERATION
Ta = 25°C
NONREPETITIVE
PULSE Ta = 25°C
temperature.
0.30.5 1 3 5 10 30 50 100
DRAIN-SOURCE VOLTAGE VDS (V)
SINGLE UNIT
15 X 15X0.8
20X30X0.8
OUNTED ON CERAMIC SUBSTRATE
40 X 50 X 0.8 mm
10 100 1000
PULSE WIDTH tw (s)
AVALANCHE ENERGY EAS (mJ)
fl A l
-15V I / l
Rg=250
EAS - Teh
25 50 '75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
/ l VDS
CCI / \—
TEST CIRCUIT WAVE FORM
_ 1 2 BVDSS
VDD = 25V, L = 221mH EAS - 2 L I (Bs-sis--- VDD
TOSHIBA ZSK2963
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2002-08-22
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