2SK2961 ,Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter ApplicationThermal Characteristics Weight: 0.36 g (typ.) Characteristics Symbol Max Unit Thermal resistance, ..
2SK2961 ,Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L−π−MOSV) 2SK2961 Relay Dr ..
2SK2962 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to R 138 °C / ..
2SK2963 ,Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application2SK2963TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (LZ-zr-MOSV)q_m-ttilI9leDC-DC CON ..
2SK2963 ,Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter ApplicationAPPLICATIONS Unit in mm.-._.~. 1£IIIAVI.U|VIHI\4V Gate Drive 0.41005Low Drain-Source ON Resistance ..
2SK2964 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSVI) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 0.13 Ω (typ.) DS (ON)High ..
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
2SK2961
Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application
2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 µA (VDS = 60 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 138
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)