2SK2952Manufacturer: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator Applications | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| 2SK2952 | TOSHIBA | 440 | In Stock |
Description and Introduction
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator Applications The part number 2SK2952 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by TOSHIBA. Below are the key specifications for the 2SK2952:
- **Type**: N-Channel MOSFET These specifications are based on the typical values provided in the datasheet for the 2SK2952 MOSFET by TOSHIBA. |
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| Partnumber | Manufacturer | Quantity | Availability |
| 2SK2952 | TOSH | 1900 | In Stock |
Description and Introduction
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator Applications The **2SK2952** from **TOSHIBA** is a high-performance **N-channel power MOSFET** designed for efficient switching and amplification in a variety of electronic applications. Known for its low on-resistance and high-speed switching capabilities, this component is well-suited for power supply circuits, motor control, and DC-DC converters.  
With a **drain-source voltage (VDSS)** rating of **500V** and a **continuous drain current (ID)** of **10A**, the 2SK2952 offers robust performance in demanding environments. Its low gate charge and fast switching characteristics help minimize power losses, making it ideal for high-efficiency designs.   The MOSFET features a **TO-220F package**, providing reliable thermal dissipation and mechanical durability. Its built-in **fast recovery diode** enhances performance in inductive load applications, reducing switching losses and improving overall system reliability.   Engineers and designers favor the 2SK2952 for its balance of power handling, efficiency, and compact form factor. Whether used in industrial equipment, automotive systems, or renewable energy solutions, this component delivers consistent performance under high-voltage conditions.   For detailed specifications and application guidelines, referring to the official datasheet is recommended to ensure optimal integration into circuit designs. |
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