2SK2920 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 6.25 ..
2SK2924 ,Silicon N-Channel Power F-MOS FETElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK2924 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C1 237 Parameter Symbol Ratings Unit1: GateDrain to Source break ..
2SK2925 , Silicon N Channel MOS FET High Speed Power Switching
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
37LV36 , 36K, 64K, and 128K Serial EPROM Family
37LV36 , 36K, 64K, and 128K Serial EPROM Family
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
2SK2920
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2920 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Rth (ch−a) 125
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
