2SK2917 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain–source ON resistance : R = 0.21 Ω (typ.) DS (ON)High forward transfe ..
2SK2917 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.39 ..
2SK2919 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK2920 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 6.25 ..
2SK2924 ,Silicon N-Channel Power F-MOS FETElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK2924 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C1 237 Parameter Symbol Ratings Unit1: GateDrain to Source break ..
37LV36 , 36K, 64K, and 128K Serial EPROM Family
37LV36 , 36K, 64K, and 128K Serial EPROM Family
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
384-5 , AM NOISE BLANKER
2SK2917
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement–mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Rth (ch–a) 41.6
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.8 mH, RG = 25 Ω, IAR = 18 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 5.8 g (typ.)
