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2SK2885
Silicon N Channel MOS FET High Speed Power Switching
TOSHIBA 2SK2882
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-7r-MOSV)
2SK2882
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
0 4V Gate Drive
0 Low Drain-Source On Resistance : RDS(ON) = 0.08 n (Typ.)
0 High Forward Transfer Admittance : Istl = 17 S (Typ.)
0 Low Leakage Current : IDSS = 100 PA (Max.) (VDS = 150V)
0 Enhancement-Mode : Vth =0.8--2.0V 0.75:0.15
(VDS = 10V, ID = 1mA)
25410.25 2.50i0.25
MAXIMUM RATINGS (Ta = 25°C) '/2 o.
CHARACTERISTIC SYMBOL RATING UNIT E_ 'f , '31:; 2
o - st'
Drain-Source Voltage VDSS 150 V 1 GATE 1
Drain-Gate Voltage (RGS = 20 k0) VDGR 150 V 2: DRAIN 3
Gate-Source Voltage VGSS i20 V 3. SOURCE
D I 18 A
Drain Current C D JEDEC -
Pulse IDP 54 A
Drain Power Dissipation (Tc = 25°C) PD 45 W EIAJ SC-67
Single Pulse Avalanche Energy** E AS 176 mJ TOSHIBA 2-10RIB
Avalanche Current IAR 18 A Weight : 1.9 g (Typ.)
Repetitive Avalanche Energy'' E AR 4.5 mJ
Channel Temperature Teh 150 T
Storage Temperature Range Tstg -55-150 T
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth (ch-c) 2.78 'C/ W
Thermal Resistance, Channel to Ambient Rth(ch-a) 62.5 "C/ W
Note ;
* Repetitive rating ; Pulse Width Limited by Max. junction temperature.
** VDD = 50V, Tch = 25°C (initial), L = 0.8 mH, RG = 25 Q, IAR = 18A
This transistor is an electrostatic sensitive device.
Please handle with caution.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual propert or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-10-22 US
TOSHIBA 2SK2882
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = i16 V, VDS = 0V - - i10 pA
Drain Cut-off Current IDSS VDS = 150V, VGS = 0 V - - 100 PA
Drain-Source Breakdown
Voltage V(BR) DSS ID - 10 mA, VGS - 0V 150 - - V
Gate Threshold Voltage Vth VDS = 10V, ID = 1 m 0.8 - 2.0 V
. . VGS = 4V, ID = 9A - 0.09 0.18
Drain-Source ON Resistance RDS(ON) VDS = 10V, ID = 9A - 0.08 0.12 f)
Forward Transfer
Admittance lyssl VDS - 10 V, ID - 9A 10 17 - S
Input Capacitance Ciss - 1380 -
Reverse Transfer VDS = 10 V, VGS = 0 V,
Capacitance Crss f = 1 MHz - 200 - pF
Output Capacitance Cogs - 610 -
. . ID = 9 A
Rise Time tr 10 V V - 12 -
GS tiifl.
Turn-on Time t - 24 -
Switching on Cl RL = 11 n ns
Time . ".
Fall Time tf w - 56 -
VDD = 100 V
. VIN '. tr, tf< 5ns,
Turn-off Time toff Duty s 1%, tw = 10ps - 130 -
Total Gate Charge (Gate-
. Qg . - 57 -
Source Plus Gate-Drain) VDD =. 120V, VGS = 10 V, C
Gate-Source Charge Qgs ID = 18A - 43 - n
Gate-Drain ("Miller'') Charge di - 14 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse IDR - - - 18 A
Pulse Drain Reverse Current IDRP - - - 54 A
Diode Forward Voltage VDSF IDR = 18 A, VGS = 0V - - -1.7 V
Reverse Recovery Time trr IDR = 18 A, VGS = O V - 185 - ns
Reverse Recovery Charge er dIDR/ dt = 100 A/ gs - 1.3 - PC
MARKING
T lk. Lot Number
K2882 - TYPE
I I Cl- Month (Starting from Alphabet A)
U U U Year (Last Number of the Christian Era)
1999-10-22 2/5
TOSHIBA
2SK2882
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
[stl (S)
ID - VDS
COMMON SOURCE
3.8 Tc = 25°C
0 1 2 3 4 5
DRAIN-SOURCE VOLTAGE VDS (V)
30 ID - VGS
COMMON SOURCE
VDS = 10 v
/ Tc = -55''C
/// 25
100 / 7
o 1 2 3 4 5
GATE-SOURCE VOLTAGE VGS (V)
Istl - ID
COMMON
SOURCE
VDS = 10 V
Te = -55''C
1 3 5 10 30 50 100
DRAIN CURRENT ID (A)
ID - VDS
COMMON
SOURCE
Te = 25°C
VGS = 2.5 V
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON SOURCE
Te = 25°C
DRAIN—SOURCE VOLTAGE VDS (V)
0 2 4 6 8 IO 12
GATE-SOURCE VOLTAGE VGS (V)
RDS (ON) - ID
COMMON SOURCE
500 To = 25°C
DRAIN-SOURCE ON RESISTANCE
RDS<0N> (mm
0.1 0.3 0.5 l 3 5 10 30 50
DRAIN CURRENT ID (A)
1999-10-22 3/5
TOSHIBA
2SK2882
RDS (ON) - Te
CO MMON
SOURCE
DRAIN-SOURCE ON RESISTANCE
RDS<0N> (mm
-80 -40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
CAPACITANCE - VDS
3‘ 1000
'd 300
a. 100
50 COMMON SOURCE
30 VGS= 0V
f: 1 MHz
Te = 25°C
0.1 0.3 0.5 l 3 5 10 30 50 100
DRAIN-SOURCE VOLTAGE VDs (V)
PD - Te
g 40 "ss.
< "ss,
5 20 "s,
3 'sss,
< "ss,
Ct 0 "s.
0 40 80 120 160
CASE TEMPERATURE Tc (°C)
DRAIN REVERSE CURRENT IDR
GATE THRESHOLD VOLTAGE Vth
DRAIN-SOURCE VOLTAGE vDs (V)
IDR - VDs
COMMON SOURCE
50 Tc = 25°C
Vgs=0, -IV
0 -0.4 -0.8 -1.2 -1.6
DRAIN-SOURCE VOLTAGE VDS (V)
Vth - Te
COMMON SOURCE
VDS = 10 V
ID = 1 mA
"ss.,.,....
1 'ss...,
- 80 - 40 0 40 80 1 20 1 60
CASE TEMPERATURE Te (°C)
DYNAMIC INPUT/OUTPUT
COMMON SOURCE
ID =18A
Te = 25°C
VDD = 120 V
0 20 40 60
TOTAL GATE CHARGE Qg (nC)
1999-10-22 4/5
TOSHIBA
2SK2882
ID (A)
DRAIN CURRENT
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth - tw
SINGLE PULSE
SAFE OPERATING AREA
1m 10m
PULSE WIDTH tw
I I I I I I III
31D MAX. (PULSED) .).k.
- f i i i i ‘\ . 75
-IIY MAX. _ 100 pr)k V
(CONTINUOUS) ?.y U)
l ms)k _ <
"s Ns k}
"ss. "s,. 'r,
hc N E
- DC OPERATION\ a
Tc = 25'C "N 5
X SINGLE NONREPETITIVE _
PULSE Te = 25°C
Curves must be derated
linearly with increase in
temperature. VDSS MAX.
1 3 10 30 100 300
DRAIN-SOURCE VOLTAGE VDS (V)
- 15 V
Peak IAR
VDD = 50V, L = 0.8mH
su/ICI-n-
Duty = t/ T
Rth (ch-c) = 2.78°C/W
100m 1 10
EAS - Teh
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
o"1l,,v-l / \
VDD / \ VDS
TEST CIRCUIT WAVE FORM
= 18 A, RG = 25 n
BVDSS-VDD)
EAs=?-L-12-(
1999-10-22 5/5
www.ic-phoenix.com
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