2SK2865 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 6.25 ..
2SK2866 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.54 Ω (typ.) DS (ON)High forward transfe ..
2SK2870-01S ,N-channel MOS-FETElectrical Characteristics (TCTest conditionsMin.UnitDrain-Source Breakdown-VoltageBVI=1mAV=0V450VD ..
2SK2872 ,N-channel MOS-FETElectrical Characteristics (TCTest conditionsMin.UnitI=1mAV=0VDrain-Source Breakdown-VoltageBV450VD ..
2SK2874 ,N-channel MOS-FETElectrical Characteristics (TCTest conditionsMin.UnitI=1mAV=0VDrain-Source Breakdown-VoltageBV500VD ..
2SK2876-01MR ,N-channel MOS-FETElectrical Characteristics (TCTest conditionsMin.UnitI=1mAV=0VDrain-Source Breakdown-VoltageBV500VD ..
37416300410 , 374 Series, TR5, Time-Lag Fuse
37LV36 , 36K, 64K, and 128K Serial EPROM Family
37LV36 , 36K, 64K, and 128K Serial EPROM Family
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
2SK2865
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2865
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2865 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 600 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 125
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)