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2SK2856
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
TOSHIBA 2SK2856
TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE
25K2856
UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
2.1 i 0.1
0 Low Noise Figure : NF=0.7dB (f: 1.5GHz) A-?-5-'--0-1
0 High Gain : Ga=21.5dB (f=1.5GHz) 1 143 m
MAXIMUM RATINGS (Ta=25°C) v'i. ":4 2 E
CHARACTERISTIC SYMBOL RATING UNIT 'a' Tn
Gate-Drain Voltage VGDO -3 V 33 i 'l'ai',r,
Gate-Source Voltage VGSO -3 V C,?, g ' fl.
Drain Current ID 80 mA 2 , _''_',
Power Dissipation PD 100 mW ir'
Channel Temperature Teh 125 T ©
Storage Temperature Range Tstg -55--125 'C
l. GATE
MARKING 2. SOURCE
3. DRAIN
2 1 4. SOURCE
Fl Fl JEDEC -
U 2 EIAJ -
Id taf TOSHIBA 2-2K1C
3 4 Weight : 0.006g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VDs=0, VGS= -2V - - -20 pA
Drain Current IDSS VDs=2V, VGS=O 15 4O 80 mA
Gate-Source Cut-off Voltage VGS (OFF) VDS=2V, 1D=100PA -0.2 -0.8 -2 V
Forward Transfer - - -
Admittance lyfsl VDS - 2V, ID - 10mA, f-- lkHz - 55 - mS
Noise Figure NF Vns--2V, ID=IOmA, f-- 1.5GHz - 0.7 1.5 dB
Associated Gain Ga VDs=2V, ID=10mA, f = 1.5GHz 18 21.5 - dB
CAUTION
This device electrostatic sensitivity. Please handle with caution.
961001EAC1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OGaIlium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are
toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products,
follgw the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic
gar age.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1997-08-30 1/4
TOSHIBA ZSK2856
Po - Pin Ga, NF - ID
15 COMMON 22
10 SOURCE - COMMON
'iS' VDS=2V ai' SOURCE
E f-- 1.5GHz / 3 VDS: 2V Fi
an 5 Ta=25°C f=1.5GHz 'S.
V GP MATCHING / O 21 Ta=25°C in
a? // E a
:53 -5 8 2 E
g " © D
S? IO / E 'ri'
F / if 20 a
B -15 / 0 5
D / , z
-20 NF
-25 19
-45 -40 -35 -30 -25 -20 -15 -10 -5 o 1 3 5 10 30 50 1
INPUT POWER Pin (dBmW) DRAIN CURRENT ID (mA)
ID, lyfsl - VGS PD - Ta
COMMON M ii
SOURCE g :2
c? VDs=2V < D
5 f=1kHz E: th,
S? Ta=25''C E g
- ttt E <
a E' a
E in-- g
td a dl ...
D g: a
O b" E
< ttt o
-1 -0.8 -0.6 -0.4 -0.2 0 0 25 50 75 100 125 150
GATE-SOURCE VOLTAGE VGS (V) AMBIENT TEMPERATURE Ta CC)
ID - VDS
COMMON
ii SOURCE
V Ta=25°C
0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE VDS (V)
1997-08-30 2/4
TOSHIBA 2SK2856
S-PARAMETER
COMMON SOURCE
(VDS=2V, ID = 10mA, Ta-- 25°C, Zo =500)
FREQ. S11 S21 S12 S22
(MHz) MAG ANG MAG ANG MAG ANG MAG ANG
100 0.999 -2 5.283 178 0.002 87 0.766 -2
200 0.997 -4 5.258 176 0.005 87 0.766 -3
300 0.997 -6 5.254 174 0.007 87 0.765 -4
400 0.990 -8 5.242 172 0.009 86 0.765 -6
500 0.987 - 10 5.207 169 0.011 84 0.765 -7
600 0.985 - 12 5.201 167 0.014 84 0.764 -8
700 0.982 - 14 5.169 166 0.016 83 0.763 - 10
800 0.980 - 16 5.150 163 0.018 82 0.763 - 11
900 0.975 - 18 5.112 162 0.020 81 0.762 - 12
1000 0.967 -20 5.089 159 0.022 81 0.760 - 14
1100 0.965 -22 5.067 158 0.024 80 0.760 - 15
1200 0.955 -24 5.047 156 0.026 79 0.757 - 16
1300 0.948 -26 5.020 154 0.028 78 0.756 - 18
1400 0.941 -27 4.991 151 0.030 77 0.754 - 19
1500 0.931 -29 4.922 150 0.032 76 0.751 -20
1600 0.924 -31 4.917 147 0.034 75 0.751 -21
1700 0.915 -33 4.879 146 0.036 75 0.747 -22
1800 0.906 -34 4.809 144 0.038 75 0.747 -23
1900 0.897 -36 4.785 142 0.039 73 0.742 -24
2000 0.885 -38 4.697 139 0.041 72 0.740 -25
2100 0.873 -39 4.691 138 0.042 71 0.735 -26
2200 0.861 -41 4.575 136 0.044 71 0.730 -27
2300 0.848 -42 4.573 135 0.045 71 0.728 -28
2400 0.838 -44 4.434 131 0.047 70 0.723 -29
2500 0.823 -45 4.433 131 0.048 69 0.721 -29
2600 0.816 -46 4.325 128 0.049 69 0.718 -30
1997-08-30 3/4
TOSHIBA
ZSK2856
CONSTANT NOISE FIGURE
NF min=0.7dB, I"opt=0.53ad14, Rn=25Q
@VDs=2V, ID-- lOmA, f-- 1.5GHz
Ta=25°C, Zo=5OQ
1997-08-30 4/4
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