2SK2845 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 8.0 Ω (typ.) DS (ON)High forward transfer ..
2SK2845 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2845 Chopper R ..
2SK2845 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 ..
2SK2846 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 4.2 Ω (typ.) DS (ON)High forward transfer ..
2SK2847 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.47 ..
2SK2850 ,N-Channel Enhancement Mode Power MOSFETSPECIFICATION
DEVICE NAME 2 Power MOSFET
TYPE NAME .' 2SK2850-01
SPEC. NO.
Fuji Electri ..
37416300410 , 374 Series, TR5, Time-Lag Fuse
37LV36 , 36K, 64K, and 128K Serial EPROM Family
37LV36 , 36K, 64K, and 128K Serial EPROM Family
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
3845 , AM NOISE BLANKER
3845 , AM NOISE BLANKER
2SK2845
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications
2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2845 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 125
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
