2SK2836 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 6.4 Ω (typ.) DS (ON)High forward transfer ..
2SK2837 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 0.833 ..
2SK2839 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications 4 V gatedrive Low drain−source ON resistance : R = 30 mΩ (typ.) DS (ON)High ..
2SK2843 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2844 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 16 mΩ (typ.) DS (ON)High ..
2SK2844 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.08 ..
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3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
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2SK2836
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2836 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance : |Yfs| = 0.85 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 Ω, IAR = 1 A
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.12 g (typ.)
Marking
