2SK2750 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 1.7 Ω (typ.) DS (ON)High forward transfer ..
2SK2751 ,Small-signal deviceElectrical Characteristics (T = 25°C ± 3°C)aParameter Symbol Conditions min typ max UnitDrain to So ..
2SK2755 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2756-01R ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2757-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2759 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB160A ,1600V Bridge in a D-34A packageBulletin I27177 03/03MB High Voltage SERIESSINGLE PHASE BRIDGE Power Modules
36MT100 ,1000V 3 Phase Bridge in a D-63 packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MT160 ,1600V 3 Phase Bridge in a D-63 packageapplications.Major Ratings and Characteristics Parameters 26MT 36MT UnitsI 25 35 AO@ T 70 60 °CCI @ ..
2SK2750
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2750 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance : |Yfs| = 3.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 600 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 28.8 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
