2SK2717 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2718 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 ..
2SK2723 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low On-ResistanceRDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A)RDS (on) 2 = 60mΩ Max. ( ..
2SK2724 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL ..
2SK2726 , Silicon N Channel MOS FET High Speed Power Switching
2SK2730 , Silicon N Channel MOS FET High Speed Power Switching
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB160A ,1600V Bridge in a D-34A packageBulletin I27177 03/03MB High Voltage SERIESSINGLE PHASE BRIDGE Power Modules
36MT100 ,1000V 3 Phase Bridge in a D-63 packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MT160 ,1600V 3 Phase Bridge in a D-63 packageapplications.Major Ratings and Characteristics Parameters 26MT 36MT UnitsI 25 35 AO@ T 70 60 °CCI @ ..
2SK2717
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter and Motor Drive Applications
2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs| = 4.4 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
