2SK2679 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.57 ..
2SK2685 , GaAs HEMT
2SK2685 , GaAs HEMT
2SK2688-01L , N-CHANNEL SILICON POWER MOSFET
2SK2689-01MR ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2689-01MR ,N-channel MOS-FETFeatures > Outline Drawing-----Avalanche Rated>
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB160A ,1600V Bridge in a D-34A packageBulletin I27177 03/03MB High Voltage SERIESSINGLE PHASE BRIDGE Power Modules
36MT100 ,1000V 3 Phase Bridge in a D-63 packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MT160 ,1600V 3 Phase Bridge in a D-63 packageapplications.Major Ratings and Characteristics Parameters 26MT 36MT UnitsI 25 35 AO@ T 70 60 °CCI @ ..
2SK2679
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2679 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2679 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.84 Ω (typ.) High forward transfer admittance : |Yfs| = 4.4 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12 mH, RG = 25 Ω, IAR = 5.5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
