2SK2661 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC朌C Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.67 ..
2SK2662 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.57 ..
2SK2662. ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 1.35 Ω (typ.) DS (ON)High forward transfe ..
2SK2664 , HVX-2 Series Power MOSFET(900V 3A)
2SK2664 , HVX-2 Series Power MOSFET(900V 3A)
2SK2666 , HVX-2 Series Power MOSFET(900V 3A)
3656AG ,Transformer Coupled ISOLATION AMPLIFIER
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB160A ,1600V Bridge in a D-34A packageBulletin I27177 03/03MB High Voltage SERIESSINGLE PHASE BRIDGE Power Modules
36MT100 ,1000V 3 Phase Bridge in a D-63 packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2661
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC朌C Converter and Motor Drive Applications
2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV)
2SK2661 Chopper Regulator, DC–DC Converter and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement–mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch–a) 83.3
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 2.0 g (typ.)
