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2SK2645 from FUJI

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2SK2645

Manufacturer: FUJI

N-channel MOS-FET

Partnumber Manufacturer Quantity Availability
2SK2645 FUJI 20014 In Stock

Description and Introduction

N-channel MOS-FET The **2SK2645** is a high-performance N-channel power MOSFET designed for efficient switching applications in various electronic circuits. Known for its low on-resistance and high-speed switching capabilities, this component is widely used in power supplies, motor control systems, and DC-DC converters.  

With a drain-source voltage (VDSS) rating of 500V and a continuous drain current (ID) of up to 8A, the 2SK2645 offers robust performance in medium-power applications. Its low gate charge and fast switching characteristics help minimize power losses, making it an energy-efficient choice for modern electronics.  

The MOSFET features a compact TO-220F package, ensuring ease of integration into circuit designs while providing effective heat dissipation. Engineers often select the 2SK2645 for its reliability, durability, and ability to handle high-voltage operations with minimal thermal stress.  

Whether used in industrial equipment, automotive electronics, or renewable energy systems, the 2SK2645 delivers consistent performance, making it a preferred component for designers seeking a balance between power handling and efficiency. Its specifications and design make it suitable for both switching and amplification tasks in demanding environments.

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