2SK2615 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Z A Thermal resistance, channel to R 2 ..
2SK2616 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Low Qg.2083B[2SK2616]6.52.35.00.540.850.7 ..
2SK2618LS ,N- Channel MOS Silicon FET Very High-Speed Switching ApplicationsAbsolute Maximum Ratings / Ta=25°CunitDrain to Source Voltage VDSS 500 VGate to Source Voltag ..
2SK2623 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Low Qg.2083B[2SK2623]6.52.35.00.540.850.7 ..
2SK2625 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions•Low ON-resistance. unit : mm• Low Qg. 2078C[2SK2625LS]10.0 4.53.22.80.9 ..
2SK2625 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
36313 , TRANSFORMER, ADSL
3650HG , Optically Coupled Linear Isolation Amplifier
3656AG ,Transformer Coupled ISOLATION AMPLIFIER
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2615
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
2SK2615 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2615 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics Rth (ch−a) 250
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.05 g (typ.)
Marking (The two digits represent the part number.)
