2SK2614 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeakagecurrentl1 ..
2SK2615 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Z A Thermal resistance, channel to R 2 ..
2SK2616 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Low Qg.2083B[2SK2616]6.52.35.00.540.850.7 ..
2SK2618LS ,N- Channel MOS Silicon FET Very High-Speed Switching ApplicationsAbsolute Maximum Ratings / Ta=25°CunitDrain to Source Voltage VDSS 500 VGate to Source Voltag ..
2SK2623 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Low Qg.2083B[2SK2623]6.52.35.00.540.850.7 ..
2SK2625 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions•Low ON-resistance. unit : mm• Low Qg. 2078C[2SK2625LS]10.0 4.53.22.80.9 ..
36313 , TRANSFORMER, ADSL
3650HG , Optically Coupled Linear Isolation Amplifier
3656AG ,Transformer Coupled ISOLATION AMPLIFIER
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2614
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
TOSHIBA ZSK2614
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-ar-MOSV)
ZSK2614
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS 6.8MAX t
5.2 , (h2 E 0.6MAA.
0 4V Gate Drive 'to,':
0 Low Drain-Source ON Resistance : RDS(ON) = 0.032 n (Typ.) OBSMAX I Z
_ V I S
0 High Forward Transfer Admittance : lyfsl = 13 S (Typ.) ih6t(h15 3‘ “am“.
0 Low Leakage Current : IDSS = 100 PA (Max.) 23 2.3 Tr,,:'.
(VDS = 50 V) 'ii' jr,':.
o Enhancement-Mode .' Vth = 0.8--2.0V 1 2 '3'l--
(VDS = 10 V, ID = 1 mA) 2
1. GATE 1
2. DRAIN Q g)
(HEAT SINK) 3
3. SOURCE
M XIMUM R TINGS T 25 C JEDEC -
A A = o
( a ) JEITA SC-64
CHARACTERISTIC SYMBOL RATING UNIT TOSHIB A 2-7B5B
Drain-Source Voltage VDSS 50 V Weight : 0.36 g (Typ.)
Drain-Gate Voltage (RGS = 20 k0) VDGR 50 V
Gate-Source Voltage VGSS i20 V 6.8MAX, g
. DC (Note 1) ID 20 51220.2 § M
Drain Current Pulse (Note 1) IDP 50 A _~_‘ N
Drain Power Dissipation (Tc = 25°C) PD 40 W f), v',-'.',)
Channel Temperature Teh 150 "C i,'s)i-ii,tx,sci)cs- ti,,,,,'
Storage Temperature Range Tstg -55--150 °C "0'1"i'la) - 0.6MAX.
2.3 23
THERMAL CHARACTERISTICS N I
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth(ch-c) 3.125 "C/ W
. . o 2
Thermal Resistance, Channel to Ambient Rth (ch-a) 125 C/W 1 G ATE 1
2. DRAIN
(Note 1) .' Please use devices on condition that the channel (HEAT SINK) 3
temperature is below 150°C. 3. SOURCE
JEDEC -
JEITA -
This transistor is an electrostatic sensitive device.
Please handle with caution. TOSHIBA 2-7B7B
Weight : 0.36g (Typ.)
1 2002-08-13
TOSHIBA ZSK2614
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = 1'16 V, VDS = 0V - - 1'10 PA
Drain Cut-off Current IDSS VDS = 50V, VGS = 0V - - 100 PA
Drain-Source Breakdown
Voltage V(BR) DSS ID - 10 mA, VGS - ov 50 - - V
Gate Threshold Voltage Vth VDS = 10 V, ID = 1 mA 0.8 - 2.0
V = 4V, I = 5 A - 0.055 0.08
Drain-Source ON Resistance RDS(ON) GS D
VGS = 10V, ID = 10A - 0.032 0.046
Forward Transfer
Admittance lyfsl VDS - 10V, ID - 10A 7 13 - S
Input Capacitance Ciss - 900 -
Reverse Transfer VDS = 10 V, VGS = 0 V,
Capacitance Crss f = 1 MHz - 130 - pF
Output Capacitance Coss - 370 -
Rise Time tr ID = 10A - 15 -
VGS 10 V Vout
Turn-on Time t - 25 -
Switching on E RL = 3 fl n
Time . S
Fall Time tf V - 30 -
VDD = 30 V
Turn-off Time toff Duty s 1%, tw = 10 ,us - 100 -
Total Gate Charge (Gate-
. Qg . - 25 -
Source Plus Gate-Drain) VDD =. 40 V, VGS = 10 V, C
Gate-Source Charge Qgs ID = 20 A - 19 - n
Gate-Drain ("Mil1er") Charge di - 6 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse
Current (Note 1) IDR - - - 20 A
Pulse Drain Reverse Current
(Note 1) IDRP - - - 50 A
Forward Voltage (Diode) VDSF IDR = 20 A, VGS = 0 V - - -1.7 V
Reverse Recovery Time trr IDR = 20 A, VGS = 0 V - 60 - ns
Reverse Recovery Charge er dIDR/ dt = 50 A/ #S - 45 - pC
MARKING
.)K. Lot Number
k2614--TYPE
I I Cl- Month (Starting from Alphabet A)
L] U Year (Last Number of the Christian Era)
2 2002-08-13
TOSHIBA ZSK2614
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2002-08-13
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