2SK2613 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 1.4 Ω (typ.) DS (ON) High forward transfer ..
2SK2614 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeakagecurrentl1 ..
2SK2615 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Z A Thermal resistance, channel to R 2 ..
2SK2616 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Low Qg.2083B[2SK2616]6.52.35.00.540.850.7 ..
2SK2618LS ,N- Channel MOS Silicon FET Very High-Speed Switching ApplicationsAbsolute Maximum Ratings / Ta=25°CunitDrain to Source Voltage VDSS 500 VGate to Source Voltag ..
2SK2623 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Low Qg.2083B[2SK2623]6.52.35.00.540.850.7 ..
36313 , TRANSFORMER, ADSL
3650HG , Optically Coupled Linear Isolation Amplifier
3656AG ,Transformer Coupled ISOLATION AMPLIFIER
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2613
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (�-MOSIII)
2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: �Yfs� = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V , ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD � 90 V, Tch � 25°C, L � 26.3 mH, RG � 25 �, IAR � 8 A
Note 3: Repetitive rating: Pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 4.6 g (typ.)
