2SK2593 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SK2597 ,N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATIONPRELIMINARY DATA SHEETSILICON POWER MOS FIELD EFFECT TRANSISTOR2SK2597N-CHANNEL SILICON POWER MOS ..
2SK2598 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2599 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R 96 ..
2SK2601 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.75 Ω (typ.) DS (ON)High forward transfe ..
2SK2602 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.0 ..
36313 , TRANSFORMER, ADSL
3650HG , Optically Coupled Linear Isolation Amplifier
3656AG ,Transformer Coupled ISOLATION AMPLIFIER
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
36MB140A ,1400V Bridge in a GBPC-A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2593
