2SK2543 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 ..
2SK2544 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.56 ..
2SK2549 ,DC .DC Converter, Relay Drive and Motor Drive Applications
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2SK2552 ,Small signal transistor for ECM impedance conversionFEATURES • Compact package 3• High forward transfer admittance 0 to 0.1 1000 µS TYP. (IDSS = 100 µA ..
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36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2543
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2543 Switching Regulator Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.3 mH, RG = 25 Ω, IAR = 8 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
