2SK2508 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor ApplicationsApplications Low drain−source ON resistance : R = 0.18 Ω (typ.) DS (ON)High forward transfer ..
2SK2508. ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2510 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2510SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
2SK2511 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
2SK2512 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
2SK2512. ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
3606BG , Digitally-Controlled Programmable Gain Instrumentation Amplifier
36313 , TRANSFORMER, ADSL
3650HG , Optically Coupled Linear Isolation Amplifier
3656AG ,Transformer Coupled ISOLATION AMPLIFIER
36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2508 -2SK2508.
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor Applications
2SK2508 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2508 Switching Regulator and DC−DC Converter and Motor Applications Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.48 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
