2SK2507 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 0.034 Ω (typ.) DS (ON)Hig ..
2SK2508 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor ApplicationsApplications Low drain−source ON resistance : R = 0.18 Ω (typ.) DS (ON)High forward transfer ..
2SK2508. ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2510 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2510SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
2SK2511 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
2SK2512 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESC ..
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36MB100A ,1000V Bridge in a D-34A packageBulletin I2715 rev. I 03/03MB SERIESSINGLE PHASE BRIDGE Power Modules
36MB120A ,1200V Bridge in a D-34A packageFeaturesUniversal, 3 way terminals:push-on, wrap around or solder25 AHigh thermal conductivity pack ..
2SK2507
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2507 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2507 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 50 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 272 µH, RG = 25 Ω, IAR = 25 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
