2SK2497 ,N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmO T.nw Nnign Fianna . NF:1 911R ffr=19.C,TTz1 .‘1.1-.‘ 2.16102 _l, 1.1 -l.. ..
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2SK2497
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
TOSHIBA 2SK2497
TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE
2SIK2497
SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm
0 Low Noise Figure : NF= 1.2dB (f: 12GHz) ' 1.1 l 2.16102 1.1
0 High Gain : Ga-- 10dB (f-- 12GHz) E; I
MAXIMUM RATINGS (Ta = 25°C) C'; g
CHARACTERISTIC SYMBOL RATING UNIT Cl
Gate-Drain Voltage VGDO -3 V 2
Gate-Source Voltage VGSO - 3 V 10+ 0.15
Drain Current ID 80 mA 3i - 0.1 3
Power Dissipation PD 150 mW g j, 3
Channel Temperature Tch 125 T 2 ~4th g
Storage Temperature Range Tstg - 55 ''''- 125 "C ,_
l. GATE t'
. 2. SOU RCE o
Marking 3. DRAIN
4 4. SOU RCE
JEDEC -
1 I l K I l 3 EIAJ -
TOSHIBA 2-2M1A
2 Weight : 0.016g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VDS = O, VGS = - 2V - - - 20 PA
Drain Current IDSS VDS = 2V, VGS = 0 15 40 80 mA
Gate-Source Cut-off Voltage VGS (OFF) VDS = 2V, ID = 100 PA - 0.2 - 0.8 - 2 V
Forward Transfer - - -
A dmi ttance Istl VDS - 2V, In - lOmA, f - 1kHz - 50 - mS
Noise Figure NF VDS = 2V, ID = 10mA, f= 12GHz - 1.2 1.6 dB
Associated Gain Ga VDS = 2V, ID = 10mA, f = 12GHz 8.5 10 - dB
CAUTION
GaAs (Gallium Arsenide) is used in this product. The dust or vapor can be dangerous to humans. Do
not break, cut, crush or dissolve chemically. Dispose of this product properly according to law. Do
not intermingle with normal industrial or domestic waste.
This device electrostatic sensitivity. Please handle with caution.
961001 EAC2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
of the buyer, when utilizing
TOSHIBA
ID - VDS
COMMON SOURCE
Ta = 25°C
DRAIN CURRENT 1]) (mA)
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
NF, Ga - ID
NOISE FIGURE NF (dB)
COMMON SOURCE
VDS = 2V 9
f-- 12GHz
Ta = 25°C
5 10 30 50 100
DRAIN CURRENT ID (mA)
Po - Pi
COMMON SOURCE
VDS ' 2V
15 ID = 10mA
Ta = 25°C
GP MATCHING
OUTPUT POWER P0 (dBmW)
-20 -15 -10 -5 0 5 10
INPUT POWER Pi (dBmW)
Ga (dB)
ASSOCIATED GAIN
DRAIN CURRENT 1]) (mA)
DRAIN POWER DISSIPATION PD (mW)
2SK2497
ID - VGS
50 COMMON SOURCE
vDs = 2V
Ta = 25°C
-1.6 -1.2 -0.8 -0.4 0 0.4
GATE-SOURCE VOLTAGE VGS (V)
0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta (°C)
961001 EAC2'
products with other industrial waste or with domestic garbage.
O Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or
pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the
O The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
1997-05-12 2/5
TOSHIBA
2SK2497
S-PARAMETER
COMMON SOURCE
(VDS = 2V, ID = 10mA, Ta = 25°C, Zo = 500)
FREQ. INPUT (S11) FORWARD ($21) REVERSE ($12) OUTPUT (S22)
(MHz) MAG ANG MAG ANG MAG ANG MAG ANG
2000 0.925 -32 5.342 147 0.045 71 0.720 - 19
3000 0.843 -50 5.212 131 0.062 62 0.662 -31
4000 0.744 _70 5.000 113 0.079 48 0.597 -43
5000 0.635 -92 4.707 91 0.093 36 0.508 -55
6000 0.540 - 116 4.344 77 0.099 27 0.425 -67
7000 0.474 - 139 3.908 61 0.106 18 0.367 -79
8000 0.415 - 163 3.540 47 0.107 7 0.306 -90
9000 0.378 167 3.205 30 0.108 -5 0.227 - 101
10000 0.388 143 2.968 16 0.109 - 11 0.175 - 119
11000 0.415 124 2.800 3 0.110 - 18 0.156 - 140
12000 0.446 102 2.587 - 16 0.116 -29 0.124 - 168
13000 0.485 82 2.403 -31 0.117 -38 0.113 150
14000 0.529 64 2.246 -50 0.120 -50 0.135 118
15000 0.593 43 2.055 _70 0.123 -65 0.185 75
16000 0.657 25 1.781 -87 0.117 -78 0.277 46
1997-05-12 3/5
TOSHIBA
COMMON SOURCE
V135: 2V
ID = 10mA
Ta-- 25°C
(UNIT 1 Q) .
j25 j100
j10 j250
COMMON SOURCE
VDS = 2V
ID = 10mA
Ta-- 25°C
2SK2497
COMMON SOURCE
VDS = 2V
ID = 10mA
Ta-- 25''C .
(UNIT : Q) J50
j25 j100
j10 j250
10 25 50 100 {250
0 , . '
t f=2GHz
-j10 8 -j250
-j26 - j100
1997-05-12 4/5
TOSHIBA 2SK2497
CONSTANT NOISE FIGURE
NF min=1.20dB, Popt=0.14 Z158, Rn=6.1n
@ VDS = 2V, ID = 10mA, f-- 12GHz
Ta=25°C, 20:500
325 '100
1 7dB j150
. j250
NF min=1.2dB
0 10 5 + 50 1 0 250
-j10 -j250
i26 -j100
1997-05-12 5/5
www.ic-phoenix.com
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