2SK2385 ,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)APPLICATIONSUnit in mmCHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
2SK2391 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.57 ..
2SK2394 ,N-Channel Junction Silicon FET Low-Noise HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK2399 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 6.25 ..
2SK2401 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.13 Ω (typ.) DS (ON)High forward transfer ..
2SK2403 , General-Purpose Switching Device Applications
35CLQ045SCS ,35A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 packageFeaturesThe 35CLQ045 center tap Schottky rectifier has beenCharacteristics 35CLQ045 Unitsexpressly ..
35F0121-1SR-10 , 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
35MB40A ,Conductor Products, Inc. - Power Modules Single Phase Diode Bridges
3606BG , Digitally-Controlled Programmable Gain Instrumentation Amplifier
36313 , TRANSFORMER, ADSL
3650HG , Optically Coupled Linear Isolation Amplifier
2SK2385
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
TOSHIBA 2SK2385
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-rr-MOSV)
2SIK2385
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS
Unit in mm
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
APPLICATIONS
0 4V Gate Drive
0 Low Drain-Source ON Resistance : RDS(0N)=22mQ (Typ.)
0 High Forward Transfer Admittance : lYfsl=27S(Typ.)
0 Low Leakage Current : ID55=100/1A (Max.) (VDS=60V)
0.75 $0.15
0 Enhancement-Mode : Vth = 0.8--2.0V (VDS = 10V, ID = 1mA)
2.54i0.25 2.5410.25
MAXIMUM RATINGS (Ta = 25°C) '/2 I'.
CHARACTERISTIC SYMBOL RATING UNIT ii'r-iE?3r-Eii.' 2
Drain-Source Voltage VDSS 60 V 1
Drain-Gate Voltage(RGs=20kQ) VDGR 60 V g 3ng 3
Gate-Source Voltage VGSS :20 V 3: SOURCE
DC I 36 A
Drain Current D JEDEC -
Pulse IDP 144 A EIA SC 6
Drain Power Dissipation (Tc=25°C) PD 40 W J - 7
Single Pulse Avalanche Energy** E AS 365 mJ TOSHIBA 2-10RIB
Avalanche Current IAR 36 A Weight : 1.9g
Repetitive Avalanche Energy* E AR 4 mJ
Channel Temperature Tch 150 T
Storage Temperature Range Tstg -55--150 T
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel To Case Rth(ch-c) 3.125 °C/ W
Thermal Resistance, Channel To Ambient Rth (ch-a) 62.5 °C/W
Note ;
* Repetitive rating ; Pulse Width Limited by Max.
junction temperature.
** VDD=25V, Starting Tch=25°C, L=383PH, RG--25fk
IAR=36A
This transistor is an electrostatic sensitive device.
Please handle with caution.
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-11-12 1/5
TOSHIBA ZSK2385
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = , 16V, VDS = 0V - - i 10 #A
Drain Cut-off Current IDSS VDS = 60V, VGS = 0V - - 100 PA
Drain-Source Breakdown - -
Voltage V (BR) DSS In - lOmA, VGS - 0V 60 - - V
Gate Threshold Voltage Vth VDS = 10V, ID = 1mA 0.8 - 2.0 V
. . VGS=4V, ID: 15A - 40 55
Drain-Source ON Resistance RDS (ON) VDS= 10V, ID = 18A - 22 30 m0
Forward Transfer
Admittance lyfsl VDS - 10V, ID - 18A 15 27 - S
Input Capacitance Ciss - 1800 -
Reverse Transfer - - -
Capacitance Crss VDS - 10V, VGS - 0V, f - 1MHz - 350 - pF
Output Capacitance Coss - 900 -
Rise Time tr 10V n ID = 18A - 20 -
VGS 0V VOUT
Turn-on Time t - 30 -
Switching on E RL =
Time . 1.20 ns
Fall Time tf V - 40 -
VDD'=.30V
. VIN .' tr, tf<5ns,
Turn-off Time toff Duty s 1%, tw= 1 O/es - 130 -
Total Gate Charge (Gate-
. Qg . - 60 -
Source Plus Gate-Drain) VDD=-48V, VGS=10V C
Gate-Source Charge Qgs ID = 36A - 40 - n
Gate-Drain ("Miller") Charge di - 20 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse
Current IDR - - - 36 A
Pulse Drain Reverse Current IDRP - - - 144 A
Diode Forward Voltage VDSF IDR = 36A, VGS = 0V - - - 1.8 V
Reverse Recovery Time trr IDR = 36A, VGS = 0V - 60 - ns
Reverse Recovery Charge er dIDR/ dt=50A/ ps - 51 - nC
MARKING
k2385--- TYPE
Ll Ll U
.)K. Lot Number
I l El- Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
1998-11-12 2/5
TOSHIBA 2SK2385
ID - VDS ID - VDS
COMMON SOURCE
Tc=25°C
<3 Ci'
n: ttt
COMMON SOURCE
Tc=25°C
o 0.4 0.8 1.2 1.6 2.0 0 4 s 12 16 20
DRAIN-SOURCE VOLTAGE vns (V) DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS VDS - VGS
COMMON SOURCE
Tc=25°C
g Tc---55t 8
COMMON SOURCE g
VDS=10V ©
o 2 4 6 8 10 0 4 8 12 16 20
GATE-SOURCE VOLTAGE vos (V) GATE-SOURCE VOLTAGE VGS (V)
lstl - ID RDS(ON) - ID
COMMON SOURCE
50 VDs=10V
COMMON
SOURCE
30 Tc = 25''C
Te = - 55°C
FORWARD TRANSFER ADMITTANCE
”H (S)
DRAIN—SOURCE 0N RESISTANCE
1 3 5 10 30 50 100 . 1 3 5 10 30 50 100
DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)
1998-11-12 3/5
TOSHIBA
DRAIN-SOURCE ON RESISTANCE
RDS (ON)
CAPACITANCE C (pF)
DRAIN POWER DISSIPA'I‘ION PD
RDS (0N) - Te
COMMON SOURCE
VGS= 10V
-80 -40 0 40 80 120 160
CASE TEMPERATURE Te CC)
CAPACITANCE - VDS
COMMON SOURCE
Vgs=0V
f= lMHz
Tc=25°C
0.1 0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V)
20 's,
0 40 80 120 160 200
CASE TEMPERATURE Te (°C)
DRAIN REVERSE CURRENT IDR
GATE THRESHOLD VOLTAGE Vth
DRAIN-SOURCE VOLTAGE VDS (V)
ZSK2385
IDR - VDS
COMMON SOURCE
Te = 25°C
0 -0.4 -0.8 -1.2 -1.6 -2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Vth - Te
COMMON SOURCE
VDS = 1 0V
ID = 1mA
- 80 - 40 0 40 80 1 20 1 60
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
80 CHARACTERISTICS 16
COMMON SOURCE
VDD = 48V
ID = 36A
Tc = 25''C
0 20 40 60 80 100
TOTAL GATE CHARGE Qg (nC)
GATE-SOURCE VOLTAGE VGS (V)
1998-11-12 4/5
TOSHIBA
DRAIN CURRENT
rth (t) / Rth (ch-c)
g m 0.1
'iif,5 0.05
3 m 0.05
< N 0.02
ii E 0.03 SINGLE PULSE
a 0.01
10p 100y lm
ZSK2385
rth - tw
PDMII I I I
Duty=t/T
Rth (ch-c) = 3.1 25°C / W
10m 100m 1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
ID MAX. (PULSED) ..x.
ID MAX.
(CONTINUOUS)
10ms)k.
10 DC OPERATION
Tc = 25°C
X SINGLE NONREPETITIVE
0.5 PULSE Tc=25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.3 1 3 10 30 100 300
DRAIN-SOURCE VOLTAGE VDS (V)
EAS - Teh
t, 300
Ix.) 200
25 50 75 100 125 150
CHANNEL TEMPERATURE Tch (°C)
15V IAR
I I / \
_15V I l/ N
VDD / \ VDs
TEST CIRCUIT WAVE FORM
Peak IAR=36A, RG--25n EAS=LL .p. (fl
2 BVDSS-VDD
VDD=25V, L=383PH
1998-11-12 5/5
www.ic-phoenix.com
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