2SK2350 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 4.16 ..
2SK2353 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 1. Gate2. DrainDrain to Source Voltage (2SK ..
2SK2354 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES3.2 ±0.22.7 ±0.2• Low On-Resistance2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)2SK235 ..
2SK2355 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2355, 2SK2355-Z/2SK2356, 2SK2356-ZSWITCHINGN-CHANNEL POWE ..
2SK2356 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low On-Resistance42SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)12 32SK2356: RDS(on) ..
2SK2356-Z-E1 ,N-channel enhancement type DMOSFEATURES• Low On-Resistance42SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)12 32SK2356: RDS(on) ..
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
35-80 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
35CLQ045SCS ,35A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 packageFeaturesThe 35CLQ045 center tap Schottky rectifier has beenCharacteristics 35CLQ045 Unitsexpressly ..
35F0121-1SR-10 , 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
2SK2350
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC .DC Converter and Motor Drive Applications
2SK2350 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.26 Ω (typ.) High forward transfer admittance : |Yfs| = 8 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 2.47 mH, RG = 25 Ω, IAR = 8.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
