2SK2312 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 13 mΩ (typ.) DS (ON)High ..
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2SK2314 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.67 ..
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3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
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35CLQ045SCS ,35A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 packageFeaturesThe 35CLQ045 center tap Schottky rectifier has beenCharacteristics 35CLQ045 Unitsexpressly ..
2SK2312
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SK2312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 µH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
