2SK2237 ,SILICON N CHANNEL MOS TYPEapplications of our products. No responsibility is assumed by TOSHIBA ior any infringements 01 pate ..
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35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
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2SK2237
SILICON N CHANNEL MOS TYPE
TOSHIBA
Discrete Semiconductors 2SK2237
Unit in mm
Silicon N Channel MOS Type (t - MOS IV)
' . . . . . . 2 0.2 l 0.2
High Speed, High Current Switching Applications. -12tt?a.3-, "-'c'c'-'--e-'' 2
Chopper Regulator, DC-DC Converter and Motor Drive Applications. t,
o 9 Vi g
. Low Drain-Source ON Resistance: BsioN)= 0.69 (Typ,) 3 'l
q High Forward Transfer Admittance: IYsl = 5.5S (Typ.) '
0 Low Leakage Current: bss = 100 pA (Max,) (Vos =500V) u l . 1.1 I I
. Enhancement Mode: lh, = 2.0 ~ 4.0V (vDs = lov, b = 1 mA) ' g '
0.15:0.15 f. l
Maximum Ratings G = 25°C) ,
25420.25 g.S4to.ts
Charattttrlstitt Symbol Rating Unit 2 et
. t, ....£" 2
Drain-Source Voltage 16ss 500 V ',tir--EEE".'."C'i"CI:i'j '
Drain-Gate Voltage (P65 = 20 dl) V06" 500 V .
Gale-Source Volta e t30 V t GATE
g Ihss 2 DRAIN a
. DC In 7 A 3. SOURCE
Drain Current
Pulse IDP 28 A JEDEC ..
Drain Power Dissipation (T = 25°C) PD 45 W EIAJ $0.67
Channel Temperature Tch 150 = TOSHIBA 2-10R1B
Storage Temperature Range % -55 - 150 "C Weight : 1.9g
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance, Channel to Case Wen) 2.77 ''C/W
Thermal Resistance, Channel to Ambient Emma) 62.5 ''C/W
This transistor is an electrostatic sensitive device.
Please Handle With Caution.
The information contained here is subject to change without notice.
The inttormation contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements ol patents or other tights ofthe third parties
which may result lrom its use. No (icense is granted by implication or otherwise under any patent " patent rights of TOSHIBA or others. These TOSHIBA products ale intended far usage in general electronic
equipments Wtiks equipment, communication equipment, measuring equipment. domestic electrification, etc.) Please make sure that you consult with us below you use these TOSHIBA products in equip-
ments which require high quality ana/or reliability, and in equipments which could have major impact to the welfare of human lite (atomic energy control, spaceship. trattkt signal, combuslion control. all types
tat safety devices. etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA,
TOSHIBA CORPORATION 1/6
C] 9097250 DUEL?BD 003 I:
2SK2237
Electrical Characteristics G = 25°C)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
Gate Leakage Current lass VGS = 125V, Vos = 0V - - 110 LlA
Gate-Source Breakdown Voltage Yisrntass Io = 1100 WA, V05 = OV k30 - - V
Drain Cut-Off Current bss Vos = 500V, Vas = 0V - - 100 gA
Drain-Source Breakdown Voltage YBR)DSS ID = 10 mA, vas = 0V 500 - - V
Gate Threshold Voltage lh, Vos = 10V, b = 1 mA 2.0 - 4.0 V
Drain-Source ON Resistance Fbsz) Vas = 10V, b = 4A - 0.6 0.8 n
Forward Transfer Admittance IYisl Vos = 10V, b = 4A 3.0 5.5 - S
Input Capacitance Gs - 1300 -
Reverse Transfer Capacitance tks :1”; 11:: Vas= 0V - 80 - pF
Output Capacitance Cass - 360 -
Rise Time k _ - 20 -
VGS .1:er ID=4A V
Turn-on Time ton . 06;! ? 1RL=500 - 50 -
Switching Timing g . ns
Fall Time l VDD:200V - 30 -
VIN : tr, tf< tins
Duty s 1%, tw= 10ps
Turn-off Time t," - 125 -
Total Gate Charge (Gate-Source Plus t2 - 30 -
Gate-Drain) g VDD = 400V, Vtss = 10V "
Gate-Source Charge 0gs ID = 7A - 18 -
Gate-Drain ("Miller'') Charge Qd - 12 -
Source-Drain Diode Ratings and Characteristics (ir= 25°C)
Characteristic Symbol Test Candilinn Min. Typ. Max. Unit
Continuous Drain Reverse Current bn - - - 7 A
Pulse Drain Reverse Current Imp - - - 28 A
Diode Forward Voltage lbs: IDR = 7A, Vas = 0V - - -1.7 V
Reverse Recovery Time k ksn = 7A, Vas = ov - 450 - ns
Reverse Recovery Charge Q, dlrm / dt = 100A/ws - 4.0 - wc
D R0R'7i?S0 UDEL?EL THC! ©
TOSHIBA CORPORATION
23K2237
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DRAIN-SOURCE VOLTAGE VDS(V) GATE-SOURCE VOLTAGE VGS(V)
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DRAIN-SOURCE VOLTAGE VDS(V)
_ GATE-SOURCE VOLTAGE 'vc.5(V)
TOSHIBA CORPORATION 3/6
Cl 9037250 00211722 l311315 El
2SK2237
RDS(ON)-Tc Wtsl
[STANCE
tht a3 t a m _ w
FORWARD TR SFBR ADMITANCE
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DRAIN CURRENT .lD(A)
CASE TEMPERATURE Te ('C)
IDR-YDS
I DR (A)
RDS (ON) - l D
[STANCE
0 -0. 4 -0. 8 -l. 2 -l.6 -t 0
DRA l N REVERSE CURRENT
DRAIN-SOURCE VOLTAGE vosa s ‘w m .
DRAIN CURRENT ID(A)
4/6 TOSHIBA CORPORATION
© 9097250 002L723 ELL E3
GATE THRESHOLD VOLTAGE Vth(V)
tN 150
CASE TEMPERATURE Te GD
CAPACITIES '.-hrty S
ttt 0.3 l t
DRAIN-SOURCE VOLTAGE 'VDS (V)
DRAIN [’0ng DISSIPATION
2SK2237
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CASE TEMPERATURE Te tto
TDSHlBA CORPORATION
I: “113973513 DUEL?EH 756 El
2SK2237
ID-VD8 IrDS-vGs
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0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE vos (V) GATE-SOURCE VOLTAGE VGS (v)
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tt DRAIN CURRENT 10(5)
0 4 8 16 2th 24
DRAIN-SOURCE VOLTAGE vos (V)
6/6 TOSHIBA cnnponATloN
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www.ic-phoenix.com
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