2SK2200 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 0.28 Ω (typ.) DS (ON)High ..
2SK2201 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 6.25 ..
2SK2209-01R ,Power MOSFETSPECIFICATION
DEVICENAME : Power MOSFET
TYPENAME ' 2SK2209-0IR
SPEC. No. .' MS5F3165
Fu ..
2SK2211 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK2216 , Silicon N-Channel MOS FET
2SK2218 ,High-Frequency Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
35-80 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
35CLQ045SCS ,35A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 packageFeaturesThe 35CLQ045 center tap Schottky rectifier has beenCharacteristics 35CLQ045 Unitsexpressly ..
2SK2200
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SK2200 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2200 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 96.1
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 Ω, IAR = 3 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.54 g (typ.)
