2SK2162 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeakagecurrentl1 ..
2SK2165-01 ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2166-01R ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2167 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK2168 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK2169 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance.. Very high-speed switching.Abu -__e__e__F__ Ratings at Ta=25°C unitDra ..
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
35-80 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
2SK2162
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
TOSHIBA ZSK2162
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
ZSK2162
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
Unit in mm
58MAXV Q
o High Breakdown Voltage : VDSS = 180V Lt,2'-d'hl E w
0 High Forward Transfer Admittance : Istl = 0.7 S (Typ.) g
0 Complementary to 2SJ338 _ui,
0.95MAx.5 [, I , g
ostms I g (h6MAX.
MAXIMUM RATINGS (Ta = 25°C) 2.3 2.3 _
CHARACTERISTIC SYMBOL RATING UNIT _° _
Drain-Source Voltage VDSS 180 V 1 2 3 -
Gate-Source Voltage VGSS i20 V
Drain Current (Note 1) ID 1 A 1. GATE
Power Dissipation (Tc = 25°C) PD 20 W g: 1'ylltfiEAT SINK)
Channel Temperature Teh 150 °C JEDEC -
Storage Temperature Range Tstg -55--150 T JEIT A S C- 64
(Note 1) : Please use devices on condition that the channel TOSHIBA 2-7BIB
. 1 1 o . .
temperature IS be ow 50 C Weight .. 0.3 6g (Typ.)
E 6.5t0.2 a ?,
MARKING 5.2f:0.2 s. % 0.6MAX.
lk. Lot Number ru.
K2162 -TYPE l l El- Month (Starting from Alphabet A) 'ii. “:2
"r g 1110.2
L] jf? Year (Last Number of fgiu (j *3:
the Christian Era) _ N -4/6MAX-
2.3h0.15 23:20.15
'ii-','.') itE2Een',ii,
(3.23;; A- IA’LJIGi'UKIS
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC -
JEITA -
TOSHIBA 2-7J1B
Weight : 0.36g
1 2002-08-12
TOSHIBA ZSK2162
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VDS = 0, VGS = i'ZOV - - i100 nA
Drain-Source
Breakdown Voltage V(BR)DSS ID - 10 mA, VGS - ov 180 - - V
Gate -Source Cut-off Current VGS (OFF) VDS = 10V, ID = 10mA 1.4 - 2.8 V
Drain-Source Saturation
Voltage VDS(ON) ID - 0.6 A, VGS - 10V - 1.7 3.0 V
Forward Transfer
Admittance Istl VDS - 10V, ID - 0.3 A - 0.7 - S
Input Capacitance Ciss - 170 -
Output Capacitance Coss VDS = 10 V, VGS = 0, - 45 - F
Reverse Transfer C f = 1 MHz 17 p
Capacitance rss - -
This transistor is the electrostatic sensitive device.
Plese handle with caution.
2 2002-08-12
TOSHIBA ZSK2162
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2002-08-12
:
www.loq.com
.
