2SK2078 ,Field Effect Transistor / N Channel MOS TypeAbsolute Maximum Ratings (Ta = 25C)CHARACTERISTIC SYMBOLDtain-Source Voltage (ssRATINGl Drain-Gate ..
2SK2082-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2084 , Silicon N Channel MOS FET
2SK2084 , Silicon N Channel MOS FET
2SK208-GR , General Purpose and Impedance Converter and Condenser Microphone Applications
2SK208-Y , General Purpose and Impedance Converter and Condenser Microphone Applications
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
2SK2078
Field Effect Transistor / N Channel MOS Type
TOSHIBA
Discrete Semiconductors 2SK2078
Field Effect Transistor . . . . .
Industrial Applications Unit m mm
Silicon N Channel MOS Type (c-MOS IIS)
High Speed, High Current Switching Applications
Features
q Low Drain-Source ON Resistance
- RDS(0N) = 1.on (Typ.)
q High Forward Transfer Admittance
- MS I = 4.0S (Typ.)
. Low Leakage Current
- bss = 300% (Max.) (Vos= 0V)
. Enhancement-Mode
- vm= 1.5 -3.5V(Nbs=10V, b=1mA)
20.0.‘t0.3
2 0.5: 0.5
5.4 5102 5.4 510.2
Absolute Maximum Ratings (Ta = 25C) il + “l, 3 "
on o r
CHARACTERISTIC SYMBOL RATING UNIT - p, ....t... 34 i,
Dlain-Source Voltage Voss 800 V
Drain-Gale Voltage (ts = 2thtt) VDGR 800 ll l. G ATE
tlate-Source Voltage Ihss :30 V 2. DRAIN (HEAT SINK)
Drain Current DC b 9 A 3. SOURCE
Pulse be 27 JEDEC -
Drain Power Dissipation Po 150 W EIAJ SC-65
(Tc = 25°C)
TOSHIBA 2-1601B
Channel Temperature h, 150 oO W . h
Storage Temperature Range h, -55 ..150 °C elg t . 4.6g
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case mm) 0.833 ''0M
Thermal Resistance, Channel to Ambient a(ch-a) 50 ''0M
This transister is an electrostatic sensitive device. Please handle with caution.
TOSHIBA conponATIoN 1/6
2SK2078
Electrical Characteristics (Ta = 250)
CHARACTERISTIC
SYMBOL TEST CONDITION MIN. TYP. MAX, UNI
Gate Leakage Current Iss Vss = 130V. V03: 0/ - -. 1100 M
Drain (M-off Currenl bss Vos = 800V. V35: 0V - - IN IA
Drain-Source Breakdown Voltage lbs; DSS b--10rtth, V63: (N 800 - - V
Gate Threshold Voltage y, V93 = IIN, b--. 1mA 1.5 - 3.5 ll
Drain-Source DN Resistance lk; (ON) his = 1011, ID: 4A - 1.0 1.2 n
Forward Ttansfer Admittance th, l hs = 15V, b= M 2.0 40 - S
Input Capacitance tiss - 1150 -
ll = 5V, V = W, F
Reverse Transter Capaciiance Cs; flfmfm Gs - 135 - p
Output Capacitance G, - 210 -
Rise Time tr - 35 -
Switching Time Tum-on Time G 10V ID ''.' 4% - 55 - ns
Tum-off Time l, RL = - 100 -
E 1000
VDD#4OOV
VIN l tr, tt
Duty s 1%, tw= 10ps
Total Gate Charge th - 85 -
(GawSource Plus tlate-Drain) Von = 400V, V65: -10V,
Gate-Source Charge (b lo = 9A - 4O - nC
GaIe-Drain (''Miller") Charge b -. 45 -
Source-Drain Diode Ratings and Characteristics (Ta = 25:)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Continuous Drain Reverse Current h - - - 9 A
Pulse Drain Reverse Current [gap - - - 27 A
Diode Forward Voltage ysr lim = 9A, var-- 0V - - -2.0 V
Reverse Recovery Time k Inn = 9A, V65: th/ - 300 - ns
Reverse Recovered Charge 0, mm,“ 100Ms - 26 - pf:
TOSHIBA CORPORATION
DRAIN CURRENT ID (A) DRAIN CURMNT ID (A)
mamas rmnsnn ADMITTANCZ
[Yul (SI
COMMON
SOURCE
Tttnr26'C
Vcs-4V
0 4 8 12 16 20
DRAlN-SOURCE VOLTAGE VDS (V)
In - VGS
us COMMON SOURCE
vDs-zov
0 2 4 6 8 10 12 "
GATE-SOURCB VOLTAGE V03 on
ersl - ID
COMMON SOURCE
Vos-20V
0.1 0.3 1 a m
DRAIN CURRENT ID (A)
DRAIMSOURCE VOLTAGE Vps (V) DRAIN CURRENT ID (A)
DRAlN-SOUECE 0N azswmncz
Rns2SK2078
In - VDS
COMMON
souncz 10
VGs-‘V
10 20 M) 40 My
DttAiN.S0URtm VOLTAGE V05 (V)
VDS - VGS
COMMON SOURCE
Tc-25‘C
4 8 12 16 20 " 28 32
GATE-SOURCE VOLTAGE Iltts on
Rnswm - In
COMMON SOURCE
Tear 25'0
0.3 l 3 10
DRAIN CURRENT In (A)
TOSHIBA CORPORATION
2SK2078
DRAlN-SOURCE 0N RESISTANCE
CAPACITANCE C ([1?) 3135mm ( )
DRAIN POWER DISSIPATION Pp (W)
Rnswm - Te
COMMON SOURCE
VGS’ 10V
-80 -(0 0 40 80 120 [60
CASE TEMPERATURE Te CC)
CAPACITANCE - YDS
COMMON SOURCE
VcssOV
I'IdMH:
Tc-25'C
DJ " I 3 tit 30 100
DRAlN-SOURCE VOLTAGE vos (V)
PD - Te
150 "s
o 40 so 120 ttio
CASE TEMPERATURE Te ttc)
GATE THRESHOLD VOLTAGE Va. (V) DRAIN REVERSE CURRENT [DE (A)
DflAlN-SOURCE VOLTAGE Vps (V)
IDIt - vns
COMMON SOURCE
're26t
t 0,-1
-o.¢ -o.a .43 -I.s -2.0 -u
DRAlN-SOURCE VOLTAGE vns (W
Va, - Tc
CODIMON SOURCE
YDS" 10V
In:- ImA
-(0 0 40 80 no 160
CASE TEMPERATURE Te ('C)
DYNAMIC INPUTI OUTPUT
VDD-IOOV
GATE-SOURCE VOLTAGE VGS (V)
20 40 60 80 100 120
TOTAL GATE CHARGE Its (:10)
TOSHIBA CORPORATION
2SK2078
rth - lw
E - l) o 5
hi I' 5 uly- .
_ tho "
iii!.:'..,
- e 0.1
g , 0.1
g8 0.05
ts PDMI I I I I
gs 0.02
'auy SINGLE PULSE eh I
o Duty-UT
lit 0.005 Rttte-0.83'GtW
10p l00p lm IOm 100m 1 10
muss wm'm tw (s)
SAFE OPERATING AREA
" In MAXJPULSEDIX
m In MAX.tCONTtNU0USt
3 DC OPERATION
Tc-26‘O
DRAIN CURRENT ID (A)
oa yt SINGLE NONRta'tmTNB
pmss Tc=25‘C
canvas MUST BE DERATED
0.1 unumv WITH INCREASE IN
TEMPERATURE. Vnss MAX.
" 30 100 300 1000
DRAIN-SOURCE VOLTAGE vos (V)
TOSHIBA CORPORATION 5/6
www.ic-phoenix.com
.
