2SK2057 ,Field Effect Transistor / Silicon N Channel MOS TypeThermal CharacteristicsCHARACTERISTICThermal Resistance, Channel to CaseThermal Resistance, Channel ..
2SK2057 ,Field Effect Transistor / Silicon N Channel MOS TypeAbsolute Maximum Ratings (Ta = 256)ChARA0TERl8Tl0 SYMBOL RATING UNITDrain-Source VollageDrain-Gate ..
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35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
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2SK2057
Field Effect Transistor / Silicon N Channel MOS Type
TOSHIBA
Discrete Semiconductors
Field Effect Transistor
Silicon N Channel MOS Type (i-MOS IV)
High Speed, High Current Switching Applications
Features
q Low Drain-Source ON Resistance
- RDS(ON) = 0.249 pr.)
0 High Forward Transfer Admittance
- Ms|=158 (Typ.)
q Low Leakage Current
- bss = -100uA (Max.) (ks = 500V)
q Enhancement-Mode
- Vm = 2.0 - 4.0V Nos = -1OV, b =1mA)
Absolute Maximum Ratings (Ta .= 256)
ChARACTERl8Tl0 SYMBOL RATING UNIT
Drain-Source Voltage hss 500 V
Drain-Gate Vonage (gs = 20K!) hm 500 ll
Gale-Soutce Voltage hs t30 ll
Drain Current DO b 20 A
Pulse lap 80
Drain Power Dissipation Po 150 W
(Tc = WPC)
Channel Temperature In 150 ''0
Storage Temperature Range lo -55 - 150 “C
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case aw, 0.833 °C/W
Thermal Resistance. Channel to Ambien: 5mg) 50 °C/W
This transister is an electrostatic sensitive device. Please handle with caution.
2SK2057
Industrial Applications Unit in mm
1.0-0.2 s
20.5tO.S
5.4 5102 S4 5:02
't'i' w
i, ' g I -1 ot 3
d " “’1- q co,
1. GATE
2. DRMN(HEAT SINK)
3. SOURCE
JEDEC -..-.
EIAJ SC-65
TOSHIBA 2-1601B
Weight .' 4.6g
2SK2057
Electrical Characteristics (Ta = 256)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current liss ha = t25ll, V03: iN - - t10 "
Gate-Source Breakdown Voltage V(BR) ass k = t1UN, V93: th/ 130 - - pk
Drain cu-off Current bss hs = 500V. ks = w - - 100 m
Drain-Source Breakdown Voltage b, D35 lo =10mA, hz-- th/ 500 - - ll
Gate Threshold Voltage y, hs = lov, b = -1mA 2.0 - 4.0 ll
Drain-Source 0N Resistance lk (0N) hss =10V. ID: 10A - 0.24 0.30 n
Forward Transfer Admittance MS I hs = 10V, bs = 10A 10 15 - 8
Input Capacitance (iss - 3000 4800
Reverse Transfer Capacitance (ls $151:ng ks = W, - 220 270 pF
Outpm Capacitance tiss - 830 1200
Rise Time tr - 25 50
Switching Time Turn-on Time b, ". fl, ”40 ' Vm - (ill 120 ns
Fall Time l Ir" " m.- to a - 55 110
Tum-off Time i, vnmJK :9 mm mm - 280 560
M75196, tumiops
Total Gale Charge th - 65 130
(tlate-Sams Plus Gate-Drain) ho = 400V. V65: -10V,
Gate-Source Charge gs IO = -20A - 40 - n0
Gale-Drain (Willa'') Charge gd - 25 -
Source-Drain Diode Ratings and Characteristics (Ta = =
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX) UNIT
Continuous Drain Reverse Dutrent ie - - - 20 A
Pulse Drain Reverse Current bv, - - - 80 A
Diode Forward Voltage gs, Ian = 20A, Ile-- iN - -1.0 -1.7 ll
Reverse Recovery Time ' ion = 20A, V55: (N - 450 - ns
Reverse Recovered Charge (l (“Win = 100MB - 6.8 - w
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