2SK2038 ,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)Thermal CharacteristicsIto-55-150 'LI noI CHARACTERISTIC SYML' BOL MAX. UNITThermal Resistance, Cha ..
2SK2040-Z-E1 ,High-freq. SW power supply, AC adapter power MOSFETapplications.
2SK2040-Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 2.3 :02
Drain to Source Voltage ..
2SK2043 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage V ..
2SK2045 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage K ..
2sk2046 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta-- 25°C unitDrain-eo-Source Voltage VDSS 30 VGate-to-Source Voltage V ..
2SK2048-L ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
2SK2038
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)
TOSHIBA
Discrete Semiconductors 2SK2038
Field Effect Transistor Unit in mm
Silicon N Channel MOS Type tc-MOS ll.5)
. . . l "MAX Asat "
High Speed, High Current Switching Applications 9 "e q
Features l- y ai-S) "
q Low Drain-Source ON Resistance , f' ' Il
- ......- - o
- RDS(ON) = 1-89 (Typ.) 0 tt g g
. High Forward Transfer Admittance n , I
- Ms] = 3-03 (Typ.) .,,
0 Low Leakage Current 2020.3 g
- lross = -30UsA (Max.) @ V08: 640V " g
. Enhancement-Mode to- ' ..
- Vm = 1.5 ~ 3.5V @ VDS= -10\/, b = 1mA 14520.: SASA0.2 .
Absolute Maximum Ratings (Ta = 256) I 'd. tl -fl
to o r“
A -.-t- un- “uu .. ,
CHARACTEMml? SYMBOL RATIM UN” , 1* 53
Drain-Source Voltage Voss 800 V 1. GATE
0tah-tiate Voltage (35:2019) hom 800 v 2. DRAIN(HEAT SINK)
Gale-Source voltage Yrss t30 V 3. SOURCE
Drain Current DC b 5 A JEDEC -
Pulse be 15 EIAJ SC-65
Drain Power Dissipation PD 125 W -
Wm) TOSHIBA 2 16CIB
Channel Temperature E. 150 'T Weight : 4.6g
Storage Temperature Range Its -55 -150 “C
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case R(cm) 1.0 ''0IW
Thermal Resistance, Channel to Ambient Retra) 50 °C/W
This transister is an electrostatic sensitive device. Please handle with caution.
TOSHIBA CORPORATION 1/6
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This Material Copyrighted By Its Respective Manufacturer
25K2038
Electrical Characteristics (Ta = MC)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current hss v65 = isov, hs-- 0V - - 1‘00 nA
Drain Cut-otf Current loss hs = 640V, ks " iN - - 300 pk
Drain-Source Breakdown Voltage bt) 055 ID = 10rnh, lkss = UV 800 - - ll
Gale Threshold Voltage g, hrs = 10V. b = -1mA 1.5 - 3.5 V
Drain-Source 0N Resistance h, (0N) hs = 10V, b = 3A - 1.8 2.2 n
Forward Transfer Admittance lh, I Ilar-- 20V, b = 3A 1.0 3.0 - S
Itpf0apatritimce qss - 510 870
Reverse Transfer Capacitance (k, ¥D31=M2f51¥ ks = (N, - 60 100 pF
Oulpul Capacitance tiss - 110 165
Rise Time tr - 30 60
Switching Time Tum-on Time L, 10v ID = " VOUT - N 140 ns
Fall Time i V680 n g HL=66.7n - 35 70
Tpm-off Time b, " - _ - 165 330
VIN : tr, tf<5ns. VDD'r200V
DutyS Mb, w: 10sm
Total Gate Charge On - 47 94
(tMe-Source Plus Gate-Dvain) Von = 400V, ks = IW,
Gate-Source Charge ths IO = -5A - 19 - "C
Gate-Drain ('Miller') Charge b - 28 -
Source-Drain Diode Ratings and Characteristics (Ta = 233)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Conlinuous Drain Reverse Current dn - - 5 A
Pulse Drain Reverse Current ke - - 15 A
Diode Forward Voltage hr ba = 5A. v65: ov - -1 .9 ll
Reverse Recovery Time ' Inn = 5A, V65: 0V 1450 - ns
Reverse Recovered Charge 0, dlahi= INA/wi 20 - pc
I: QUENESD DUELEBB RT? III
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA CORPORATION
2SK2038
Io - VDS lD - VDS
coooNsotmcsio I C0MM0NS00RCE I a
'rc-zs'c 'rc-as-c
3: Ci.:
"t at:
V vcs-4V
4 a 12 " " " 20 so " so
DRANSOURCE VOLTAGE Vos (V) DRAINSOURCE VOLTAGE VDS (V)
ty - VGS Istl - ID
Li.? s
COMMON U E 0 COMMON SOURCE
a so RC E vDs-zov T"“'C
VDs-NV t
'iii:." s
w tll ih" t
o: * V
EE fil
Temt-66'C t
o , . 5 a no 0.: on t a no
GATE-SOURCE VOLTAGE VGS M DRAIN CURRENT to (A)
btps- V68 RDS(ON) - ID
COMMON SOURCE
Tear "NI
COMMON SOURCE
Te" 15'C
Vcs- 10V
DHAlN-SOURCE ON RESISTANCE
Rosz) ($2)
DRAINSOUHCE VOLTAGE vDs (V)
4 3 " " 20 0.1 0.3 t 3 to
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
TOSHIBA CORPORATION 3/6
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This Material Copyrighted By Its Respective Manufacturer
2SK2038
VDS (ON) - Tc
'DR - Vos
RDS(ON) - Tc
COMMON SOURCE
Vas- 10V
" COMMON SOURCE
'rc-zs'c
Rosmm) (9)
Vcs-IOV
a t .-1
DHAIN-SOURCE ON RESISTANCE
DRAIN REVERSE CURRENT '08 (A)
~80 ~40 0 40 80 t20 160 0 -o.. -0.3 -L1 -|.6 -2.0
CASE TEMPERATURE Tc CC) DRANSOURCE VOLTAGE Vos (V)
CAPACITANCE - Ilbs Vth - Tc
:iii.'
EC 1 M:
S?, tf
t..'-i g
o l (D
E COMMON SOURCE g
?i Vcs-W F. ' COMMON SOURCE
Tcl25'c E Vos-IOV
r-um: g lD-lmA
tht oa l 3 10 " too -8tt ..-40 0 " " t20 ISO
DRAIN-SOURCE VOLTAGE vos (V) CASE TEMPERATURE Tc (''C)
PD - Tc DYNAMIC INPUTIOUTPUT CHARACTERISTICS
g 1 l?,
& "s b'
Cf) \ > VDDIHOOV
Q 1 's, Lu
2 "s. fi V05
Lu , D
l " 80 120 160 0 20 40 60 80 100
CASE TEMPERATURE Tc CC) TOTAL GATE CHARGE 09 (n0)
TOBHIBA CORPORATION
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This Material Copyrighted By Its Respective Manufacturer
2SK2038
rth - tw
Duly " 0.5
r'tniLTI..,_CL,...
_____.l“"1'
Duly-tl?
ttth (ch-c)‘ Igt'tetw
10p loot, 1m 10m t00m l 10
N08 MALIZED TRANSIENT THERMAL IMPEDANCE
701(1)”? th(ch-c)
PULSE WIDTH lw(s)
SAFE OPERATING AREA
ID MAXJPULSED) '
ID MAX. (CONTINUES)
DC OPERATION
c-25’C
DRAIN CURRENT ID (A)
M SINGLE NONREPETtTwB
tht PULSE Tcuzm
CURVES MUST BE DERATED VDSS MAX.
UNKARLY WITH INCREASE
IN TEMPERATURE.
3 " 30 too 800 1000
DRANSOURCE VOLTAGE VDS (V)
ToaHIBA conponATloN 5/6
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