2SK2036 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2037 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2037 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching
2SK2038 ,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)Thermal CharacteristicsIto-55-150 'LI noI CHARACTERISTIC SYML' BOL MAX. UNITThermal Resistance, Cha ..
2SK2040-Z-E1 ,High-freq. SW power supply, AC adapter power MOSFETapplications.
2SK2040-Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 2.3 :02
Drain to Source Voltage ..
2SK2043 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage V ..
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
2SK2036
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2036 High Speed Switching Applications
Analog Switching Applications High input impedance. Low gate threshold voltage: Vth = 0.5~1.5 V Excellent switching times: ton = 0.28 µs (typ.) toff = 0.34 µs (typ.) Small package Enhancement-mode
Marking Equivalent Circuit
Maximum Ratings (Ta ��� � 25°C) Tstg
Note: This transistor is electrostatic sensitive device. Please handle with caushon.
Unit: mm
Weight: 0.012 g (typ.)
