2SK2033 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2034 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage.: V = 0.5~1.5 V th Excelle ..
2SK2035 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Unit: mmAnalog Switching
2SK2036 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2037 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2037 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
2SK2033
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2033 High Speed Switching Applications
Analog Switch Applications High input impedance. Low gate threshold voltage: Vth = 0.5~1.5 V Excellent switching times: ton = 0.16 µs (typ.) toff = 0.15 µs (typ.) Small package. Enhancement-mode
Marking Equivalent Circuit
Maximum Ratings (Ta ��� � 25°C) Tstg
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.012 g (typ.)
