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2SK2013TOSHIBAN/a2avaiField Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application
2SK2013TOSN/a735avaiField Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application


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35021-1201 , Board-In Right Angle Crimp Terminal
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
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2SK2013
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application
2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013

Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S (typ.) Complementary to 2SJ313
Maximum Ratings (Ta = 25°C)

Marking

Electrical Characteristics (Ta = 25°C)
180
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification O: 0.8~1.6, Y: 1.4~2.8
This transistor is the electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
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