2SK1829 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enha ..
2SK1830 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Unit: mmAnalog Switch
2SK1835 , Silicon N-Channel MOS FET
2SK1839 ,N-Channel Enhancement Silicon MOSFET Analog Switch ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1847 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage V ..
2SK1848 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
34691-0200 , Stac64™ 2.54mm (.100”) Single, Multi-Pockect and Hybrid Header System
3500C , FEMALE THREADED STANDOFFS
35021-1201 , Board-In Right Angle Crimp Terminal
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
2SK1829
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1829 High Speed Switching Applications
Analog Switch Applications 2.5 V gate drive Low threshold voltage: Vth = 0.5~1.5 V High speed Enhancement-mode Small package
Marking Equivalent Circuit
Maximum Ratings (Ta ��� � 25°C) Tstg
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.006 g (typ.)