2SK1792 ,Discrete SemiconductorsThermal CharacteristicsCHARACTERISTIG SYMBOL I MAX. UNITThermal Resistance, Channel lo Case B(clw.) ..
2SK1792 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MC) 3. SOURCECHARACTERISTICDrain-Source VoltageDrain-Gate Voltage (h ..
2SK1792 ,Discrete SemiconductorsFeaturesq 4-Volt Gate Drive. Low Drain-Source ON Resistance- RDS(ON) = 15mg fryp.)- High Forward Tr ..
2SK1796 ,MOS Field Effect Power TransistorFEATURES
0 Low On-state Resistance
RDS(on) E 1.2 Q (VGS = 10 V, ID = 5 A)
0 Low Ciss Ciss = 2 ..
2SK1796 ,MOS Field Effect Power Transistorapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Drain to Source Voltage Voss 900 V l. Gat ..
2SK1807 , Silicon N-Channel MOS FET
34691-0200 , Stac64™ 2.54mm (.100”) Single, Multi-Pockect and Hybrid Header System
3500C , FEMALE THREADED STANDOFFS
35021-1201 , Board-In Right Angle Crimp Terminal
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
2SK1792
Discrete Semiconductors
TOSHIBA
Discrete Semiconductors
Field Effect Transistor
Silicon N Channel MOS Type (Em-Mos IV)
High Speed Switching, DC-DC Converter,
Relay Drive, Motor Drive Applications
Features
q 4-Volt Gate Drive
. Low Drain-Source ON Resistance
- RDS(ON) = 15mg fryp.)
. High Forward Transfer Admittance
- |st I = 268 pr.)
. Low Leakage Current
- bss = 100% (Max.) @ VDS = 60V
. Enhancement-Mode
- Vth = 0.8 - 2.0V @1tos=10V, b=1mA
Absolute Maximum Ratings tra = 250)
23 K1 792
Industrial Applications
T0-220FL Unit in mm
25 MAX
10.6 MAX
IZVGMXN
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Vollage Voss 60 ll
Dtairthle Voltage iibs = 20m) VDGR tio ll
Gale-Source Voltage tss tN ll
Drain Current DC b 45 A
Pulse lop 180
Dtain Power Dissipation Po 100 W
(Te = 25°C)
Channel Temperature Eh 150 ''il
Storage Temperature Range In -55 - 150 “C
Thermal Characteristics
CHARACTERISTIO SYMBOL MAX. UNIT
Thermal Resistance, Channel lo Case flees) 1.25 "CM
Thermal Resistance, Channel to Ambient aw”) 83.3 °C/W
This transistor is an electrostatic sensitive device.
Please handle with care.
2.54t025 2.541025
g , . Q
ET; .."3": a f:.
1. GATE
2. DRAXN(HEAT SINK)
3. SOURCE
JEDEC --
EIAJ --.
TOSHIBA 2..10SIB
TO-ZZOSM Unit in mm
t0.3MAX "h
A if mu
l?. I 3 l?.
ll ' . .
1 lil E
2.54i025 M 410.25
I. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC -
EIAJ -
TOSHIBA 2-1 0S2B
Weight: 1.5g
2SKI 792
Electrical Characteristics (Ta = MC)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX, UNIT
Gate Leakage Current hss V53 = t20il, hs = 0V - - i100 nA
Drain Cut-iff Current ks Miss = iilht his--. IN - - 100 m
Drain-Source Breakdown Voltage bi) oss ID = 10mA, V55: 0V til) - - V
Gate Threshold Voltage l v03 = IW, lo: 1mA 0.8 - 2.0 ll
Drain-Source 0N Resistance h; (ON) hss = W, ID: 20A - 22 35 n
VGS=10V, b-- 20A - 15 20
Forward Transfer Admittance ms l V05 = 10V, ID: 20A 18 26 - S
MM Capacitance tiss - 2750 3800
Reverse Transfer Capacilance (ks ‘1”:ng ' has-- W, - 600 1000 pF
Output Capacitance G, - 1500 2200
Rise Time I - 20 40
Swimng Tum-on Time s, 10v ID=20AVOUT - so 120
Time Fall Time l V650 “DE: 'fic-sl 1.6n - 80 150 ns
Tum-oft Time k, d - 210 400
VIN t tr, tseas,' 'vmprcrtrv
DutyS 1%, tw = 10sm
Total Gate Charge On - 200 400
(tMe-Source Plus Gate-Drain) Vim = 48V, Vas-- lov,
Gate-Source Charge 0,5 l” = 45A - 135 - nt)
Gate-Drain (''Miller") Charge b - 65 -
Source-Drain Diode Ratings and Characteristics (Ta = 233)
CHARACTERISTICS SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Continuous Drain Reverse Current lin - - - 45 A
Pulse Drain Reverse Current bee - - - 180 A
Diode Forward Voltage Var Inn = 45A. ks = 0V - - -2.0 ll
Reverse Recovery Time trr lin = 45A, ks = (N - 160 - ns
Reverse Recovered Charge th, d'DR/dt = 50his - 0.2 - w
DRAIN CURRENT
DRAIN CURRENT In (A)
RANSFER ADMI'ITANCE
nysl (5)
FORWARD '1‘
ID - VDS
COMMON to s '
SOURCE
Tc-26'C 8
VGS= 2.5V
0 0,4 " L2 1.6 2.0
DMlN-SOURCE VOLTAGE Vus thr)
in - Vcs
COMMON SOURCE
Vns- 10v
o 1 2 a 4 6 6
GATE.SOURCE VOLTAGE vcs thr)
[Yrsl - ID
COMMON SOURCE
Te--66'tl
Vpsulov
l 3 5 10 30 60
DRAIN CURRENT ID (A)
DRAlN-SOURCE VOLTAGE Vns (VI DRAIN CURRENT ID (A)
DRAINSOURCE 0N RESISTANCE
RDSlON) (mm
2SK1 792
ID - VDs
COMMON SOURCE
Tc-25‘C
Vcs I 2.5V
2 4 6 8 lo
DRAIN-SOURCE VOLTAGE vos on
VDS - VGS
COMMON SOURCE
Tc-25‘C
lD-45A
2 4 6 8 10 12
GATE-SOURCE VOLTAGE VGS (V)
RDS (0N) - ID
COMMON SOURCE
Te =25'C
V05 ' 4V
' 6 lo M 60 100
DRAIN CURRENT ID IN
2SK1 792
ommsouncs 0N nzsxsnucz
Rns‘om (m
CAPACITANCE C (171’)
DRAIN POWER DISSIPATION
PD (W)
Ros (ON) .... Te
COMMON SOURCE
V65: 10V
VGS" 4V
Vcs " 4V
- BO - 40 0 40 80 120 160
CASE TEMPERATURE Te ('C)
CAPACITANCE - VDS
(too COMMON
sou RCE
r- [MHz
Tc I 26'tl
0.3 l 3 10 30
DRMNSOURCE VOLTAGE VDS (V)
's,,,,
" M 120 160
CASE TEMPERATURE Te CC)
DRAIN REVERSE CURRENT Inn (A)
GATE THRESHOLD VOLTAGE Vu, (V)
DRAIN CURRENT In (A)
IDR - vDS
COMMON
SOURCE
Tt-25‘C
ll -0.8 -1.6 -2.& -3.1 -.4.0
DRAINvSOURCE VOLTAGE VDS (V)
Vth - Te
COMMON SOURCE
V03: 10V
ID I lmA
-.80 ~40 0 " 80 120 160
CASE TEMPERATURE Te em
SAFE OPERATING AREA
lOOysX
ID MAX.
1 (PULSEDHK
ID MAX.
(CONTINUOUS)
DC OPERATION
Tc-25‘C
1 tie SINGLE NONEEPETITIVE
PULSE Te=26'C
CURVES MUST BE DERATED
“NEARLY WITH INCREASE
IN TEMPERATURE.
V055 MAX
0.t 0.3 1 3 10 30 too 300
DRAIN-SOURCE VOLTAGE VDS Wt
NORMALIZED nuuswm THERMAL
IMPEDANCE rmmlflwch-c)
Duty -0.5
SINGLE PULSE
rth - tw
PULSE WIDTH Lu (8)
muI.fTL......rL...
Duty=ttT
Rm (chu' 1.26NHW
2SK1 792
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