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2SK1611PanasonicN/a231avaiV(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification


2SK1611 ,V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplificationAbsolute Maximum Ratings (T = 25°C)CParameter Symbol Ratings Unit1.3±0.2Drain to Source breakdown v ..
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2SK1645 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
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2SK1611

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