2SK161 ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admit ..
2SK1611 ,V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplificationAbsolute Maximum Ratings (T = 25°C)CParameter Symbol Ratings Unit1.3±0.2Drain to Source breakdown v ..
2SK1622 , Silicon N-Channel MOS FET
2SK1622 , Silicon N-Channel MOS FET
2SK1623 , Silicon N-Channel MOS FET
2SK1645 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
3440 , 3M Pak 100 4-Wall Header
3-440 , 3M Pak 100 4-Wall Header
34691-0200 , Stac64™ 2.54mm (.100”) Single, Multi-Pockect and Hybrid Header System
3500C , FEMALE THREADED STANDOFFS
35021-1201 , Board-In Right Angle Crimp Terminal
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
2SK161
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK161 FM Tuner Applications
VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 9 mS (typ.) Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) NF VDD � 10 V, f � 100 MHz (Figure 1)
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR: 5.0~10.0 mA
Unit: mm
Weight: 0.13 g (typ.)
